Visualizing Band Profiles of Gate-Tunable Junctions in MoS₂/WSe₂ Heterostructure Transistors

Xinzuo Sun; Yan Chen; Zhiwei Li; Yu Han; Qin Zhou; Binbin Wang; Takashi Taniguchi; Kenji Watanabe; Aidi Zhao; Jianlu Wang; Yuan Liu; Jiamin Xue

doi:10.1021/acsnano.1c05491

journal article·2021-10-26

Visualizing Band Profiles of Gate-Tunable Junctions in MoS₂/WSe₂ Heterostructure Transistors

Xinzuo Sun, Yan Chen, Zhiwei Li, Yu Han, Qin Zhou, Binbin Wang, Takashi Taniguchi, Kenji Watanabe, Aidi Zhao, Jianlu Wang, Yuan Liu, Jiamin Xue

ACS Nano· Volume 15· Issue 10

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Source abstract

Abstract

Heterostructure devices based on two-dimensional materials have been under intensive study due to their intriguing electrical and optical properties. One key factor in understanding these devices is their nanometer-scale band profiles, which is challenging to obtain in devices. Here, we use a technique named contact-mode scanning tunneling spectroscopy to directly visualize the band profiles of MoS2/WSe2 heterostructure devices at different gate voltages with nanometer resolution. The long-held view of a conventional p–n junction in the MoS2/WSe2 heterostructure is reexamined. Due to strong inter- and intralayer charge transfer, the MoS2 layer in contact with WSe2 is found to convert from n-type to p-type, and a series of gate-tunable p–n and p–p+ junctions are developed in the devices. Highly conductive edges are also discovered which could strongly affect the device properties.

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Research context

Nanomaterials Electronic materials

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

University of Chinese Academy of Sciences, Beijing 100190, China

Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

School of Physics and Electronics, Hunan University, Changsha 410082, China

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funding

Ministry of Education, Culture, Sports, Science and Technology · Ministry of Science and Technology of the People's Republic of China · Japan Society for the Promotion of Science · National Natural Science Foundation of China · Chinese Academy of Sciences

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