Precise Tuning of Multiple Perovskite Photoluminescence by Volume-Controlled Printing of Perovskite Precursor Solution on Cellulose Paper
Source abstract
Abstract
Metal halide perovskite nanocrystals (PeNCs) with a controlled quantum size effect have received intense interest for potential applications in optoelectronics and photonics. Here, we present a simple and innovative strategy to precisely tune the photoluminescence color of PeNCs by simply printing perovskite precursor solutions on cellulose papers. Depending on the volume of the printed precursor solutions, the PeNCs are autonomously grown into three discrete sizes, and their relative size population is controlled; accordingly, not only the number of multiple PL peaks but also their relative intensities can be precisely tuned. This autonomous size control is obtained through the efflorescence, which is advection of salt ions toward the surface of a porous medium during solvent evaporation and also through the confined crystal growth in the hierarchical structure of cellulose fibers. The infiltrated PeNCs are environmentally stable against moisture (for 3 months in air at 70% relative humidity) and strong light exposure by hydrophobic surface treatment. This study also demonstrates invisible encryption and highly secured unclonable anticounterfeiting patterns on deformable cellulose substrates and banknotes.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Organic Light-Emitting Diodes Research · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, 37673 Pohang, Gyeongbuk, Republic of Korea
UNIST Central Research Facilities, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, 44919 Ulsan, Republic of Korea
Gradute School of Semiconductor Material and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, 44919 Ulsan, Republic of Korea
Funding
Ministry of Science and ICT, South Korea
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