Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Source abstract
Abstract
The growth of monolayer MoS 2 crystals on chemomechanically polished (CMP) N-polar GaN using PTAS-assisted chemical vapor deposition is demonstrated. The formation of monolayer MoS 2 was initially prevented by the as-grown GaN’s large surface roughness. CMP reduces the roughness to 250 pm, enabling monolayer MoS 2 triangles with edge lengths of 30 μm, a Raman peak separation of <20 cm –1, and an optical bandgap of 1.81 eV, which is on par with those obtained on smooth Ga-polar GaN. It is thus demonstrated that high-quality MoS 2 monolayers can be obtained on N-polar GaN for future high-speed optoelectronic and quantum sensing applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
Adroit Materials, Cary, North Carolina 27518, United States
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Funding
North Carolina State University · National Science Foundation
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Show source-provided references
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