journal article·2023-04-14

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Rohan Sengupta, Shipra Vaidya, Dennis Szymanski, Dolar Khachariya, Michal Bockowski, Grzegorz Kamler, Pramod Reddy, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis

ACS Applied Nano Materials· Volume 6· Issue 7
Publisher page

Abstract

The growth of monolayer MoS 2 crystals on chemomechanically polished (CMP) N-polar GaN using PTAS-assisted chemical vapor deposition is demonstrated. The formation of monolayer MoS 2 was initially prevented by the as-grown GaN’s large surface roughness. CMP reduces the roughness to 250 pm, enabling monolayer MoS 2 triangles with edge lengths of 30 μm, a Raman peak separation of <20 cm –1, and an optical bandgap of 1.81 eV, which is on par with those obtained on smooth Ga-polar GaN. It is thus demonstrated that high-quality MoS 2 monolayers can be obtained on N-polar GaN for future high-speed optoelectronic and quantum sensing applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States

Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States

Adroit Materials, Cary, North Carolina 27518, United States

Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

Funding

North Carolina State University · National Science Foundation

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