III–V Integration on Si(100): Vertical Nanospades
Source abstract
Abstract
III-V integration on Si(100) is a challenge: controlled vertical vapor liquid solid nanowire growth on this platform has not been reported so far. Here we demonstrate an atypical GaAs vertical nanostructure on Si(100), coined nanospade, obtained by a nonconventional droplet catalyst pinning. The Ga droplet is positioned at the tip of an ultrathin Si pillar with a radial oxide envelope. The pinning at the Si/oxide interface allows the engineering of the contact angle beyond the Young-Dupré equation and the growth of vertical nanospades. Nanospades exhibit a virtually defect-free bicrystalline nature. Our growth model explains how a pentagonal twinning event at the initial stages of growth provokes the formation of the nanospade. The optical properties of the nanospades are consistent with the high crystal purity, making these structures viable for use in integration of optoelectronics on the Si(100) platform.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain
UPC - Universitat Politècnica de Catalunya, Calle Jordi Girona, 1-3, 08034 Barcelona, Spain
ICREA, Pg. Lluís Companys 23, 08010 Barcelona, Catalonia, Spain
Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Institute of Physics, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Funding
Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung · Ministerio de Econom?a y Competitividad · ?la Caixa? Foundation · Generalitat de Catalunya · AFiM
References (71)
Show source-provided references
1. 10.1126/science.106271110.1126/science.1062711 ↗
2. 10.1021/nl304067410.1021/nl3040674 ↗
3. 10.1063/1.183687310.1063/1.1836873 ↗
4. 10.1016/j.cplett.2007.05.09310.1016/j.cplett.2007.05.093 ↗
5. 10.1038/nphoton.2013.3210.1038/nphoton.2013.32 ↗
6. 10.1126/science.123096910.1126/science.1230969 ↗
7. 10.1126/science.122236010.1126/science.1222360 ↗
8. Liu Z.-h. · AIP Adv. · 2018 · 8 · 0751151
9. 10.1103/PhysRevB.96.12543510.1103/PhysRevB.96.125435 ↗
10. 10.1088/1361-6528/aa5d8010.1088/1361-6528/aa5d80 ↗
11. 10.1080/17435390.2016.118961510.1080/17435390.2016.1189615 ↗
12. 10.1021/acs.nanolett.6b0528810.1021/acs.nanolett.6b05288 ↗
13. 10.1063/1.175397510.1063/1.1753975 ↗
14. 10.1103/PhysRevB.77.15532610.1103/PhysRevB.77.155326 ↗
15. 10.1063/1.283719110.1063/1.2837191 ↗
16. 10.1007/s12274-008-8009-410.1007/s12274-008-8009-4 ↗
17. 10.1021/nl504437v10.1021/nl504437v ↗
18. 10.1021/acs.nanolett.7b0312610.1021/acs.nanolett.7b03126 ↗
19. 10.1088/0957-4484/22/27/27560210.1088/0957-4484/22/27/275602 ↗
20. 10.1021/nl404376m10.1021/nl404376m ↗
21. 10.1103/PhysRevLett.99.14610110.1103/PhysRevLett.99.146101 ↗
22. 10.1063/1.144731210.1063/1.1447312 ↗
23. 10.1021/nl401767b10.1021/nl401767b ↗
24. 10.1088/0957-4484/16/10/06010.1088/0957-4484/16/10/060 ↗
25. 10.1063/1.367913610.1063/1.3679136 ↗
26. 10.1002/adma.20150354010.1002/adma.201503540 ↗
27. 10.1039/C6NR09477E10.1039/C6NR09477E ↗
28. 10.1021/acs.cgd.6b0085810.1021/acs.cgd.6b00858 ↗
29. 10.1039/C5NR05288B10.1039/C5NR05288B ↗
30. 10.1021/nl102140k10.1021/nl102140k ↗
31. 10.1109/16.241210.1109/16.2412 ↗
32. 10.1063/1.11191410.1063/1.111914 ↗
33. 10.1021/nl801185310.1021/nl8011853 ↗
34. 10.1088/1361-6528/aa5ec110.1088/1361-6528/aa5ec1 ↗
35. 10.1038/nature1714810.1038/nature17148 ↗
36. 10.1021/acs.cgd.5b0037410.1021/acs.cgd.5b00374 ↗
37. 10.1039/C5NR04821D10.1039/C5NR04821D ↗
38. 10.1021/nl201902w10.1021/nl201902w ↗
39. 10.1021/nl300840q10.1021/nl300840q ↗
40. 10.1021/nn304526k10.1021/nn304526k ↗
41. 10.1063/1.326394810.1063/1.3263948 ↗
42. 10.1002/adma.20070146010.1002/adma.200701460 ↗
43. 10.1063/1.10129710.1063/1.101297 ↗
44. 10.1016/0022-0248(82)90135-X10.1016/0022-0248(82)90135-X ↗
45. 10.1039/C7TA01328K10.1039/C7TA01328K ↗
46. 10.1016/0040-6090(84)90419-X10.1016/0040-6090(84)90419-X ↗
47. 10.1016/0022-0248(83)90184-710.1016/0022-0248(83)90184-7 ↗
48. 10.1021/acs.nanolett.8b0336510.1021/acs.nanolett.8b03365 ↗
49. 10.1016/j.mser.2008.01.00110.1016/j.mser.2008.01.001 ↗
50. 10.1021/acs.nanolett.5b0512510.1021/acs.nanolett.5b05125 ↗
51. 10.1126/science.279.5348.20810.1126/science.279.5348.208 ↗
52. 10.1021/nl404244u10.1021/nl404244u ↗
53. 10.1016/0001-6160(60)90145-010.1016/0001-6160(60)90145-0 ↗
54. 10.1103/PhysRevLett.95.14610410.1103/PhysRevLett.95.146104 ↗
55. 10.1039/C8NR05787G10.1039/C8NR05787G ↗
56. 10.1088/0957-4484/23/28/28560110.1088/0957-4484/23/28/285601 ↗
57. 10.1002/(SICI)1521-4079(199911)34:9<1091::AID-CRAT1091>3.0.CO;2-S10.1002/(SICI)1521-4079(199911)34:9<1091::AID-CRAT1091>3.0.CO;2-S ↗
58. 10.1016/0022-3697(64)90055-110.1016/0022-3697(64)90055-1 ↗
59. 10.1016/j.actamat.2016.04.03010.1016/j.actamat.2016.04.030 ↗
60. 10.1103/PhysRevLett.121.16610110.1103/PhysRevLett.121.166101 ↗
61. 10.1021/acs.nanolett.5b0340410.1021/acs.nanolett.5b03404 ↗
62. Joyce, H. J. Growth and Characterisation of III–V Semiconductor Nanowires for Optoelectronic Device Applications. Thesis, 2009; pp 1–182.
63. 10.1063/1.33655910.1063/1.336559 ↗
64. 10.1063/1.9283010.1063/1.92830 ↗
65. 10.1038/nmat355710.1038/nmat3557 ↗
66. 10.1021/acs.nanolett.7b0540210.1021/acs.nanolett.7b05402 ↗
67. 10.1021/nl901633610.1021/nl9016336 ↗
68. 10.1088/0957-4484/24/21/21400610.1088/0957-4484/24/21/214006 ↗
69. 10.1063/1.493954910.1063/1.4939549 ↗
70. 10.1021/acs.chemrev.8b0064910.1021/acs.chemrev.8b00649 ↗
71. 10.1021/acs.nanolett.9b0045910.1021/acs.nanolett.9b00459 ↗