Photocurrents in a Single InAs Nanowire/Silicon Heterojunction
Source abstract
Abstract
We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through midgap trap states, which form at the Si/InAs heterojunctions. Namely, the trap states add an additional transport path across a heterojunction, and the charge of the defects changes the band bending at the junction. The bending gives rise to a photovoltaic effect at a small bias voltage. In addition, we observe a photoconductance effect within the InAs nanowires at large biases.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4a, 85748 Garching, Germany
Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 Munich, Germany
Department of Chemistry, Ludwig Maximilians Universität München, Butenandtstr. 11, 81377 Munich, Germany
Institut for Advanced Study, Technische Universität München, Lichtenbergstrasse 2a, 85748 Garching, Germany
Funding
European Research Council · Deutsche Forschungsgemeinschaft
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