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journal article·2020-10-27Open access

Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

James Gigliotti, Xin Li, Suresh Sundaram, Dogukan Deniz, Vladimir Prudkovskiy, Jean-Philippe Turmaud, Yiran Hu, Yue Hu, Frédéric Fossard, Jean-Sébastien Mérot, Annick Loiseau, Gilles Patriarche, Bokwon Yoon, Uzi Landman, Abdallah Ougazzaden, Claire Berger, Walt A. de Heer

ACS Nano· Volume 14· Issue 10
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Source abstract

Abstract

The realization of high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow van der Waals semiconductors on top of EG nanostructures. Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor with a honeycomb lattice structure that matches that of graphene, making it ideally suited for graphene-based nanoelectronics. Here, we describe the preparation and characterization of multilayer h-BN grown epitaxially on EG using a migration-enhanced metalorganic vapor phase epitaxy process. As a result of the lateral epitaxial deposition (LED) mechanism, the grown h-BN/EG heterostructures have highly ordered epitaxial interfaces, as desired in order to preserve the transport properties of pristine graphene. Atomic scale structural and energetic details of the observed row-by-row growth mechanism of the two-dimensional (2D) epitaxial h-BN film are analyzed through first-principles simulations, demonstrating one-dimensional nucleation-free-energy-barrierless growth. This industrially relevant LED process can be applied to a wide variety of van der Waals materials.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materialsMaterials processing

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

School of Electrical and Computer Engineering, Georgia Institute of Technology, GT-Lorraine, 57070 Metz, France

Unité Mixte Internationale 2958, CNRS-Georgia Tech, 57070 Metz, France

Institut Néel, CNRS-Université Grenoble Alpes, BP166, 38042 Cedex 9 Grenoble, France

Laboratoire d’Etude des Microstructures, ONERA-CNRS, Université Paris Saclay, BP 72, F-92322 Châtillon, France

Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France

Tianjin International Center of Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072, China

Funding

FACE Foundation · Air Force Office of Scientific Research · H2020 Future and Emerging Technologies · Division of Electrical, Communications and Cyber Systems

References (51)

Show source-provided references
1. 10.1021/jp040650f10.1021/jp040650f ↗
2. Berger C. · 2018 · 727
3. 10.1103/RevModPhys.83.40710.1103/RevModPhys.83.407 ↗
4. 10.1038/nnano.2008.5810.1038/nnano.2008.58 ↗
5. 10.1038/nnano.2010.17210.1038/nnano.2010.172 ↗
6. 10.1021/nn301675f10.1021/nn301675f ↗
7. 10.1021/nn300996t10.1021/nn300996t ↗
8. 10.1021/nl203635v10.1021/nl203635v ↗
9. 10.1002/adma.20120490410.1002/adma.201204904 ↗
10. 10.1038/nature1218710.1038/nature12187 ↗
11. 10.1038/s41467-018-07558-310.1038/s41467-018-07558-3 ↗
12. 10.1063/1.486664810.1063/1.4866648 ↗
13. 10.1021/nl102370710.1021/nl1023707 ↗
14. 10.1021/nn301940k10.1021/nn301940k ↗
15. 10.1021/nl400815w10.1021/nl400815w ↗
16. 10.1103/PhysRevB.92.20140910.1103/PhysRevB.92.201409 ↗
17. 10.1103/PhysRevB.95.04530310.1103/PhysRevB.95.045303 ↗
18. 10.1103/PhysRevLett.116.12610110.1103/PhysRevLett.116.126101 ↗
19. 10.1021/nl200464j10.1021/nl200464j ↗
20. 10.1021/nn201414d10.1021/nn201414d ↗
21. 10.1186/1556-276X-9-36710.1186/1556-276X-9-367 ↗
22. 10.1038/srep1646510.1038/srep16465 ↗
23. 10.1557/jmr.2016.8210.1557/jmr.2016.82 ↗
24. 10.1116/1.501128010.1116/1.5011280 ↗
25. 10.1063/1.502922010.1063/1.5029220 ↗
26. 10.1038/s41467-019-10610-510.1038/s41467-019-10610-5 ↗
27. 10.1021/acsnano.5b0234510.1021/acsnano.5b02345 ↗
28. 10.1016/j.carbon.2016.04.06910.1016/j.carbon.2016.04.069 ↗
29. 10.1039/C5RA19698A10.1039/C5RA19698A ↗
30. 10.1021/nn405719x10.1021/nn405719x ↗
31. 10.1021/nn507328610.1021/nn5073286 ↗
32. 10.1021/cg300364y10.1021/cg300364y ↗
33. 10.1021/acs.cgd.6b0039810.1021/acs.cgd.6b00398 ↗
34. 10.1063/1.480836510.1063/1.4808365 ↗
35. 10.1016/j.jcrysgro.2015.11.03010.1016/j.jcrysgro.2015.11.030 ↗
36. 10.1088/2053-1583/4/1/01502810.1088/2053-1583/4/1/015028 ↗
37. 10.1021/acs.nanolett.6b0105110.1021/acs.nanolett.6b01051 ↗
38. 10.1063/1.489914210.1063/1.4899142 ↗
39. 10.1103/PhysRevLett.103.24680410.1103/PhysRevLett.103.246804 ↗
40. 10.1021/nl302398m10.1021/nl302398m ↗
41. 10.1038/s41427-019-0162-610.1038/s41427-019-0162-6 ↗
42. 10.1021/acs.chemmater.5b0360710.1021/acs.chemmater.5b03607 ↗
43. 10.1038/am.2017.22610.1038/am.2017.226 ↗
44. 10.1126/science.aau414610.1126/science.aau4146 ↗
45. Kashchiev D. · 2000
46. 10.1038/nmat369510.1038/nmat3695 ↗
47. 10.1073/pnas.110511310810.1073/pnas.1105113108 ↗
48. Berger C. · 2017 · 181
49. 10.1002/pssa.20140019910.1002/pssa.201400199 ↗
50. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
51. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗