Low-voltage organic n-channel thin-film transistors based on a core-cyanated perylene tetracarboxylic diimide derivative

Abstract Using the small-molecule organic semiconductor bis(1H,1H-perfluorobutyl)-dicyano-perylene tetracarboxylic diimide, C3F7CH2-PTCDI-(CN)2, and a low-temperature-processed, high-capacitance gate dielectric based on a phosphonic acid self-assembled monolayer, we have manufactured n-channel thin-film transistors on glass substrates. The transistors operate with low voltages (2 V) and have an electron mobility of 0.04 cm2/Vs and an on/off ratio of 105. By combining C3F7CH2-PTCDI-(CN)2 n-channel transistors with pentacene p-channel transistors, we have also manufactured low-voltage, low-power organic complementary inverters with good static and dynamic performance.