A thermally resistant and air-stable n-type organic semiconductor: Naphthalene diimide of 3,5-bis-trifluoromethyl aniline

Abstract We report a thermally resistant and air-stable n-type semiconductor based on our study of naphthalene diimide (NTCDI) derivatives ( N1 , N2 , and N3 ) with various numbers of electron-withdrawing CF 3 groups. The device using N3 , which contains aromatic NTCDI, was found to exhibit an electron mobility ( μ e ) of 0.15 (±0.04) cm 2 /V s (the maximum μ e observed was 0.24 cm 2 /V s) and an I on /I off (at V d = 80 V) of approximately 2 × 10 5 . Moreover, the N3 device exhibits excellent air stability, even when exposed to the open air for 42 days, and significantly better thermal resistance than the previously reported benzylic imide derivative R1 .