journal article·2019-09-24

Polarimetric Three-Dimensional Topological Insulators/Organics Thin Film Heterojunction Photodetectors

Ming Yang, Jun Wang, Yafei Zhao, Liang He, Chunhui Ji, Hongxi Zhou, Jun Gou, Weizhi Li, Zhiming Wu, Xinran Wang

ACS Nano· Volume 13· Issue 9
Publisher page

Abstract

As a state of quantum matter with insulating bulk and gapless surface states, topological insulators (TIs) have huge potential in optoelectronic devices. On the other hand, polarization resolution photoelectric devices based on anisotropic materials have overwhelming advantages in practical applications. In this work, the 3D TIs Bi2Te3/organics thin film heterojunction polarimetric photodetectors with high anisotropic mobility ratio, fast response time, high responsivity, and EQE in broadband spectra are presented. At first, the maximum anisotropic mobility ratio of the Bi2Te3/organics thin film can reach 2.56, which proves that Bi2Te3 can serve as a sensitive material for manufacturing polarization photoelectric devices. Moreover, it is found that the device can exhibit a broad bandwidth and ultrahigh response photocurrent from visible to middle wave infrared spectra (405–3500 nm). The highest responsivity (Ri) of optimized devices can reach up to 23.54 AW–1; surprisingly, the Ri of the device can still reach 1.93 AW–1 at 3500 nm. In addition, the ultrahigh external quantum efficiency is 4534% with a fast response time (1.42 ms). Excellent properties mentioned above indicate that TIs/organics heterojunction devices are suitable for manufacturing high-performance photoelectric devices in infrared region.
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Research context

OpenAlex topics: Graphene research and applications · Topological Materials and Phenomena · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China

National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P.R. China

Funding

Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Creative Research Groups of the National Natural Science Foundation of China · National Natural Science Foundation--Outstanding Youth Foundation

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