van der Waals Epitaxy of High-Mobility Polymorphic Structure of Mo₆Te₆ Nanoplates/MoTe₂ Atomic Layers with Low Schottky Barrier Height

High contact resistance between two-dimensional (2D) transition metal dichalcogenides (TMDs) and metal electrodes is a practical barrier for applications of 2D TMDs to conventional devices. A promising solution to this is polymorphic integration of 1T′-phase semimetallic and 2H-phase semiconducting TMD crystals, which can lower the Schottky barrier of the TMDs. Here, we demonstrate the van der Waals epitaxy of density-controlled single isolated 1T′-Mo6Te6 nanoplates on 2H-MoTe2 atomic layers by using metal–organic chemical vapor deposition. Importantly, in situ grown 1T′-Mo6Te6 nanoplates significantly reduce the contact resistance of the 2H-MoTe2 atomic layers, providing a record high mobility of 1139 cm2/V·s for Pd/1T′-Mo6Te6/2H-MoTe2 back-gated field-effect transistors, along with a low Schottky barrier height (qϕb) of 8.7 meV. These results lead to the possibility of ameliorating the high contact resistance faced by other TMDs and, furthermore, offer polymorphic structures for realizing higher-mobility TMD devices.