DataVXACS NanoPaper
journal article·2022-04-26

Electronic Tuning in WSe2/Au via van der Waals Interface Twisting and Intercalation

Qilong Wu, Meysam Bagheri Tagani, Lijie Zhang, Jing Wang, Yu Xia, Li Zhang, Sheng-Yi Xie, Yuan Tian, Long-Jing Yin, Wen Zhang, Alexander N. Rudenko, Andrew T. S. Wee, Ping Kwan Johnny Wong, Zhihui Qin

ACS Nano· Volume 16· Issue 4
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Source abstract

Abstract

The transition metal dichalcogenide (TMD)–metal interfaces constitute an active part of TMD-based electronic devices with optimized performances. Despite their decisive role, current strategies for nanoscale electronic tuning remain limited. Here, we demonstrate electronic tuning in the WSe2/Au interface by twist engineering, capable of modulating the WSe2 carrier doping from an intrinsic p-type to n-type. Scanning tunneling microscope/spectroscopy gives direct evidence of enhanced interfacial interaction induced doping in WSe2 as the twist angle with respect to the topmost (100) lattice of gold changing from 15 to 0°. Taking advantage of the strong coupling interface achieved this way, we have moved a step further to realize an n–p–n-type WSe2 homojunction. The intrinsic doping of WSe2 can be recovered by germanium intercalation. Density functional theory calculations confirm that twist angle and intercalation-dependent charge transfer related doping are involved in our observations. Our work offers ways for electronically tuning the metal–2D semiconductor interface.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Advanced Thermoelectric Materials and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, PR China

Department of Physics, University of Guilan, P.O. Box 41335-1914, Rasht 32504550, Iran

School of Microelectronics, Northwestern Polytechnical University, Xi’an 710072, Shaanxi & NPU Chongqing Technology Innovation Center, Chongqing 400000, PR China

Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, 6525 AJ Nijmegen, The Netherlands

Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore

Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, 6 Science Drive 2, 117546, Singapore

Funding

Natural Science Foundation of Chongqing · National Natural Science Foundation of China · Natural Science Foundation of Shaanxi Province · Natural Science Foundation of Hunan Province, China · the Strategic Priority Research Program of Chinese Academy of Sciences

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