Dielectric Nanowire Hybrids for Plasmon-Enhanced Light–Matter Interaction in 2D Semiconductors

Monolayer transition metal dichalcogenides (TMDs) with a direct band gap are suitable for various optoelectronic applications such as ultrathin light emitters and absorbers. However, their weak light absorption caused by the atomically thin layer hinders more versatile applications for high optical gains. Although plasmonic hybridization with metal nanostructures significantly enhances light–matter interactions, the corrosion, instability of the metal nanostructures, and the undesired effects of direct metal–semiconductor contact act as obstacles to its practical application. Herein, we propose a dielectric nanostructure for plasmon-enhanced light–matter interaction of TMDs. TiO2 nanowires (NWs), as an example, are hybridized with a MoS2 monolayer on various substrates. The structure is implemented by placing a monolayer MoS2 between a TiO2 NW for a photonic scattering effect and metallic substrates with a spacer for the plasmonic Purcell effect. Here, the thin dielectric spacer is aimed at minimizing emission quenching from direct metal contact, while maximizing optical field localization in ultrathin MoS2 near the TiO2 NW. An effective emission enhancement factor of ∼22 is attained for MoS2 near the NW of the hybrid structure compared to the one without NWs. Our work is expected to facilitate a hybridized platform based on 2D semiconductors for high-performance and robust optoelectronics via engineering dielectric nanostructures with plasmonic materials.