journal article·2018-10-23Open access

Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit

Jiamin Sun, Yanxue Yin, Mingming Han, Zai-xing Yang, Changyong Lan, Lizhe Liu, Ying Wang, Ning Han, Lifan Shen, Xinglong Wu, Johnny C. Ho

ACS Nano· Volume 12· Issue 10

Abstract

As an important semiconductor nanomaterial, InP nanowires (NWs) grown with a typical vapor–liquid–solid mechanism are still restricted from their low electron mobility for practical applications. Here, nonpolar-oriented defect-free wurtzite InP NWs with electron mobility of as high as 2000 cm2 V–1 s–1 can be successfully synthesized via Pd-catalyzed vapor–solid–solid growth. Specifically, PdIn catalyst particles are involved and found to expose their PdIn{210} planes at the InP nucleation frontier due to their minimal lattice mismatch with nonpolar InP{2̅110} and {1̅100} planes. This appropriate lattice registration would then minimize the overall free energy and enable the highly crystalline InP NW growth epitaxially along the nonpolar directions. Because of the minimized crystal defects, the record-high electron mobility of InP NWs (i.e., 2000 cm2 V–1 s–1 at an electron concentration of 1017 cm–3) results, being close to the theoretical limit of their bulk counterparts. Furthermore, once the top-gated device geometry is employed, the device subthreshold slopes can be impressively reduced down to 91 mV dec–1 at room temperature. In addition, these NWs exhibit a high photoresponsivity of 104 A W–1 with fast rise and decay times of 0.89 and 0.82 s, respectively, in photodetection. All these results evidently demonstrate the promise of nonpolar-oriented InP NWs for next-generation electronics and optoelectronics.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, P. R. China

Shenzhen Research Institute of Shandong University, Shenzhen 518057, P. R. China

Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR P. R. China

Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China

State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China

Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, P. R. China

Funding

Research Grants Council, University Grants Committee · Ministry of Science and Technology of the People's Republic of China · Commonwealth Scientific and Industrial Research Organisation · Shandong University · National Natural Science Foundation of China · Natural Science Foundation of Shandong Province · Chinese Academy of Sciences · Science Technology and Innovation Committee of Shenzhen Municipality

References (76)

Show source-provided references
1. 10.1038/3505104710.1038/35051047 ↗
2. 10.1021/acs.nanolett.5b0349610.1021/acs.nanolett.5b03496 ↗
3. 10.1126/science.106234010.1126/science.1062340 ↗
4. 10.1021/acs.nanolett.6b0010410.1021/acs.nanolett.6b00104 ↗
5. 10.1088/1361-6528/aa523610.1088/1361-6528/aa5236 ↗
6. 10.1021/nl503384310.1021/nl5033843 ↗
7. 10.1021/acs.nanolett.6b0152810.1021/acs.nanolett.6b01528 ↗
8. 10.1021/nl401618210.1021/nl4016182 ↗
9. 10.1126/science.123096910.1126/science.1230969 ↗
10. 10.1038/nnano.2016.16210.1038/nnano.2016.162 ↗
11. 10.1109/BCTM.2017.811290410.1109/BCTM.2017.8112904 ↗
12. 10.1021/nl203213d10.1021/nl203213d ↗
13. 10.1021/nl104032s10.1021/nl104032s ↗
14. 10.1039/c2jm31232h10.1039/c2jm31232h ↗
15. 10.1088/0957-4484/19/46/46520310.1088/0957-4484/19/46/465203 ↗
16. 10.1021/nl903941b10.1021/nl903941b ↗
17. 10.1063/1.32792510.1063/1.327925 ↗
18. 10.1002/pssb.1970038020210.1002/pssb.19700380202 ↗
19. 10.1038/nature0757010.1038/nature07570 ↗
20. 10.1021/nl903688v10.1021/nl903688v ↗
21. 10.1038/srep3291010.1038/srep32910 ↗
22. 10.1038/ncomms624910.1038/ncomms6249 ↗
23. 10.1021/nl803154m10.1021/nl803154m ↗
24. 10.1063/1.479441410.1063/1.4794414 ↗
25. 10.1021/acsnano.5b0415210.1021/acsnano.5b04152 ↗
26. 10.1021/acs.nanolett.6b0004510.1021/acs.nanolett.6b00045 ↗
27. 10.1038/nmat167710.1038/nmat1677 ↗
28. 10.1021/acsnano.7b0121710.1021/acsnano.7b01217 ↗
29. 10.1021/nl403951f10.1021/nl403951f ↗
30. 10.1088/0957-4484/27/50/50560610.1088/0957-4484/27/50/505606 ↗
31. 10.1021/nl802997p10.1021/nl802997p ↗
32. 10.1038/nature0457410.1038/nature04574 ↗
33. 10.1038/nnano.2008.510.1038/nnano.2008.5 ↗
34. 10.1039/b817391e10.1039/b817391e ↗
35. 10.1021/acs.nanolett.6b0360410.1021/acs.nanolett.6b03604 ↗
36. 10.1038/nnano.2006.13310.1038/nnano.2006.133 ↗
37. 10.1039/C7TC00900C10.1039/C7TC00900C ↗
38. 10.1021/nl903362y10.1021/nl903362y ↗
39. 10.1021/nn403767j10.1021/nn403767j ↗
40. 10.1088/0957-4484/22/28/28560710.1088/0957-4484/22/28/285607 ↗
41. 10.1021/acsnano.5b0274510.1021/acsnano.5b02745 ↗
42. 10.1038/nmat435210.1038/nmat4352 ↗
43. 10.1038/nmat214010.1038/nmat2140 ↗
44. 10.1021/nl303028u10.1021/nl303028u ↗
45. 10.1557/jmr.2015.40010.1557/jmr.2015.400 ↗
46. 10.1361/10549710377033023510.1361/105497103770330235 ↗
47. 10.1063/1.488074210.1063/1.4880742 ↗
48. 10.1021/nl202365q10.1021/nl202365q ↗
49. 10.1021/nl100040710.1021/nl1000407 ↗
50. 10.1021/nl061879510.1021/nl0618795 ↗
51. 10.1021/nl072921e10.1021/nl072921e ↗
52. 10.1021/nl401767b10.1021/nl401767b ↗
53. 10.1103/PhysRevB.32.812610.1103/PhysRevB.32.8126 ↗
54. 10.1021/acs.nanolett.6b0246910.1021/acs.nanolett.6b02469 ↗
55. 10.1021/nl500870e10.1021/nl500870e ↗
56. 10.1002/pssc.20056546710.1002/pssc.200565467 ↗
57. 10.1063/1.484005510.1063/1.4840055 ↗
58. 10.1038/srep4186010.1038/srep41860 ↗
59. 10.1088/0022-3727/31/20/00110.1088/0022-3727/31/20/001 ↗
60. 10.1134/S106377611508018X10.1134/S106377611508018X ↗
61. 10.1186/s11671-016-1396-710.1186/s11671-016-1396-7 ↗
62. 10.1038/s41598-017-01080-010.1038/s41598-017-01080-0 ↗
63. 10.1063/1.489610510.1063/1.4896105 ↗
64. 10.1109/JEDS.2015.238879310.1109/JEDS.2015.2388793 ↗
65. 10.1039/C3TC31507J10.1039/C3TC31507J ↗
66. 10.1063/1.496071310.1063/1.4960713 ↗
67. 10.1038/nphoton.2015.28010.1038/nphoton.2015.280 ↗
68. 10.1021/nl070111x10.1021/nl070111x ↗
69. 10.1021/nl080373e10.1021/nl080373e ↗
70. 10.1038/nnano.2013.10010.1038/nnano.2013.100 ↗
71. 10.1002/adfm.20150413510.1002/adfm.201504135 ↗
72. 10.1063/1.348496210.1063/1.3484962 ↗
73. 10.1016/j.nanoen.2015.05.00210.1016/j.nanoen.2015.05.002 ↗
74. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
75. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
76. 10.1063/1.339540710.1063/1.3395407 ↗