In2O3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications
Source abstract
Abstract
Heat dissipation is a key issue for scaling metal-oxide-semiconductor field-effect transistors (MOSFETs). The Boltzmann distribution of electrons imposes a physical limit on the subthreshold swing (SS), which impedes both the reduction of the switching energy and the further increase of the device density. The negative capacitance effect is proposed to rescue MOSFETs from this phenomenon called “Boltzmann tyranny”. Herein, we report In2O3 nanowire (NW) transistors with SS values in the sub-60 mV/dec region, which utilize the ferroelectric P(VDF-TrFE) as the dielectric layer. An ultralow SS down to ∼10 mV/dec is observed and spans over 5 orders of magnitude in the drain current. Meanwhile, a high on/off ratio of more than 108 and a transconductance (gm) of 2.3 μS are obtained simultaneously at Vd = 0.1 V. The results can be understood by the “voltage amplification” effect induced from the negative capacitance effect. Moreover, the steep slope FET-based inverters indicate a high voltage gain of 41.6. In addition to the NOR and NAND gates, the Schmitt trigger inverters containing only one steep slope FET are demonstrated. This work demonstrates an avenue for low-power circuit design with a steep SS.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P. R. China
School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004, P. R. China
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
Funding
Ministry of Science and Technology of the People's Republic of China · Natural Science Foundation of Beijing Municipality · National Natural Science Foundation of China · Chinese Academy of Sciences · Central Committee of the Communist Party of China · Beijing Municipal Science and Technology Commission
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