DataVXACS NanoPaper
journal article·2017-08-22Open access

Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors

Trevor A. Petach, Konstantin V. Reich, Xiao Zhang, Kenji Watanabe, Takashi Taniguchi, Boris I. Shklovskii, David Goldhaber-Gordon

ACS Nano· Volume 11· Issue 8
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Source abstract

Abstract

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: Electronic and Structural Properties of Oxides · Advanced Memory and Neural Computing · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Applied Physics, Stanford University, Palo Alto, California 94305, United States

Stanford Institute for Materials and Energy Sciences (SIMES), SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States

Fine Theoretical Physics Institute, University of Minnesota, Minneapolis, Minnesota 55455, United States

Ioffe Institute, St Petersburg, 194021, Russia

National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funding

Ministry of Education, Culture, Sports, Science and Technology · Russian Science Foundation · Laboratory Directed Research and Development · Japan Society for the Promotion of Science · U.S. Department of Defense

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