Numerical study of semi-transparent thin film heterojunction p-CuO/nZnO/AZO/ITO solar cells device model using SCAPS-1D

Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, Malaysia; J. Husna; Department of Electrical Engineering, Islamic University of North Sumatra, Sumatera Utara 20217, Indonesia; P. S. Menon; Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, Malaysia; P. Chelvanathan; Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, Malaysia; Graphene & Advanced 2D Materials Research Group (GAMRG), School of Engineering and Technology, Sunway University, No. 5, Jalan Universiti, 47500 Bandar Sunway, Selangor, Malaysia; M. A. Mohamed; Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, Malaysia; S. K. Tripathy; Dept. of Electronics & Communication Engineering, National Institute of Technology Silchar, India; T. R. Lenka; Dept. of Electronics & Communication Engineering, National Institute of Technology Silchar, India

doi:10.15251/cl.2021.1811.667

journal article·2021-11Open access

Numerical study of semi-transparent thin film heterojunction p-CuO/nZnO/AZO/ITO solar cells device model using SCAPS-1D

Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, Malaysia, J. Husna, Department of Electrical Engineering, Islamic University of North Sumatra, Sumatera Utara 20217, Indonesia, P. S. Menon, Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, Malaysia, P. Chelvanathan, Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, Malaysia, Graphene & Advanced 2D Materials Research Group (GAMRG), School of Engineering and Technology, Sunway University, No. 5, Jalan Universiti, 47500 Bandar Sunway, Selangor, Malaysia, M. A. Mohamed, Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor, Malaysia, S. K. Tripathy, Dept. of Electronics & Communication Engineering, National Institute of Technology Silchar, India, T. R. Lenka, Dept. of Electronics & Communication Engineering, National Institute of Technology Silchar, India

Chalcogenide Letters· Volume 18· Issue 11

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Abstract

In the current time, transparent and semitransparent solar cells in photovoltaic industry have drawn important attention owing to their potential use as solar windows, and energy harvesting devices for building, vehicle integration and flexible electronics. In this work, a semitransparent thin film heterojunction solar cells device structure of p-CuO/nZnO/AZO/ITO was numerically modeled using SCAPS-1D software tools. The cell’s performance was investigated in terms of the different material layer properties, such as the thickness and carrier concentration or doping level. The simulation results of copper based semi-transparent thin film solar cell (TFSC) as the bottom cell model indicates that the highest efficiency was achieved at 8.9116 %, with the thickness and carrier concentration of n-ZnO material layer set at 20 nm, and 5.0 x 1018 cm-3 respectively, whereas the thickness of CuO absorber layer was fixed at 110 nm. Finally, the overall results show that CuO based absorber layer exhibits potential as photoactive material particularly for semitransparent thin film solar cells applications.

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Research context

Electronic materials

OpenAlex topics: ZnO doping and properties

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