Ultralow barrier sliding ferroelectricity in CdAl2S4 with large out-of-plane polarization
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OpenAlex topics: 2D Materials and Applications · Ferroelectric and Negative Capacitance Devices · Advanced Sensor and Energy Harvesting Materials
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References (39)
Show source-provided references
1. Emerging opportunities for ferroelectric field-effect transistors: integration of 2D materials10.1002/adfm.202310438 ↗
2. Ferroelectricity and phase transitions in Monolayer Group-IV monochalcogenides10.1103/PhysRevLett.117.097601 ↗
3. Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductor10.1038/s41467-025-61756-4 ↗
4. Ding W., Zhu J., Wang Z., et al. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials. 2017, 8(1): 14956.10.1038/ncomms14956 ↗
5. Binary compound bilayer and multilayer with vertical polarizations: two-dimensional ferroelectrics, multiferroics, and nanogenerators10.1021/acsnano.7b02756 ↗
6. Sharma P., Xiang F.-.X., Shao D-F, et al. A room-temperature ferroelectric semimetal. Sci. Adv., 5(7): eaax5080.10.1126/sciadv.aax5080 ↗
7. Ferroelectric switching of a two-dimensional metal10.1038/s41586-018-0336-3 ↗
8. In-plane ferroelectric tunnel junctions based on 2D α-In2Se3/semiconductor heterostructures10.1038/s41524-022-00953-x ↗
9. Ferroelectric order in van der Waals layered materials10.1038/s41578-022-00484-3 ↗
10. Hong Y.-.L., Liu Z., Wang L., et al. Chemical vapor deposition of layered two-dimensional MoSi2N4 materials. 2020, 369(6504): 670–4.10.1126/science.abb7023 ↗
11. The van der Waals MoSi2N4 materials family10.1038/s41578-025-00832-z ↗
12. Zhong T., Ren Y., Zhang Z., et al. Sliding ferroelectricity in two-dimensional MoA 2 N 4 (A= Si or Ge) bilayers: high polarizations and Moiré potentials. 2021, 9(35): 19659–63.10.1039/D1TA02645C ↗
13. Highly stable two-dimensional α1-MA2Z4 (M = Mg, Ca, Sr; A = Al; Z = S, Se) monolayers with promising photocatalysis and piezoresistive effect10.1063/5.0168627 ↗
14. Ferroelectricity in two-dimensional bilayers and multilayers of MgAl2S4
15. Pseudo Jahn-Teller origin of perovskite multiferroics, magnetic-ferroelectric crossover, and magnetoelectric effects: the d0-d10 problem10.1103/PhysRevLett.108.137202 ↗
16. Sliding ferroelectricity and the moiré effect in Janus bilayer MoSSe10.1039/D3NR05730E ↗
17. Resolving polarization switching pathways of sliding ferroelectricity in trilayer 3R-MoS210.1038/s41565-025-01862-y ↗
18. Non-d0 Mn-driven ferroelectricity in antiferromagnetic BaMnO310.1103/PhysRevB.79.205119 ↗
19. Two-dimensional ferromagnetic-ferroelectric multiferroics in violation of the ${d}0$ rule10.1103/PhysRevB.99.195434 ↗
20. The thermal transport properties of monolayer BiOsO3: the role of spin–orbit coupling and magnetic anisotropy10.1063/5.0302525 ↗
21. Strong four-phonon effects and anomalous thermal transport behavior in the monolayer group-IVB transition metal dichalcogenides $M{X}2 (M=\mathrm{Ti},\mathrm{Zr},\mathrm{Hf};X=\mathrm{S},\mathrm{Se})$10.1103/PhysRevB.108.214304 ↗
22. Effects of thermal expansion and four-phonon interactions on the lattice thermal conductivity of the negative thermal expansion material ${\mathrm{ScF}}3$10.1103/PhysRevB.110.134320 ↗
23. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
24. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
25. From ultrasoft pseudopotentials to the projector augmented-wave method10.1103/PhysRevB.59.1758 ↗
26. Projector augmented-wave method10.1103/PhysRevB.50.17953 ↗
27. Grimme S. Semiempirical GGA-type density functional constructed with a long-range dispersion correction. 2006, 27(15): 1787–99.10.1002/jcc.20495 ↗
28. Ab initio calculation of phonon dispersions in semiconductors10.1103/PhysRevB.43.7231 ↗
29. Green's-function approach to linear response in solids10.1103/PhysRevLett.58.1861 ↗
30. Electric polarization as a bulk quantity and its relation to surface charge10.1103/PhysRevB.48.4442 ↗
31. Hybrid functionals based on a screened coulomb potential10.1063/1.1564060 ↗
32. Theory of polarization of crystalline solids10.1103/PhysRevB.47.1651 ↗
33. A beginner's guide to the modern theory of polarization10.1016/j.jssc.2012.05.010 ↗
34. A climbing image nudged elastic band method for finding saddle points and minimum energy paths10.1063/1.1329672 ↗
35. Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS210.1038/s41467-024-55333-4 ↗
36. Origin of two-dimensional vertical ferroelectricity in WTe2 bilayer and multilayer10.1021/acs.jpclett.8b03654 ↗
37. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling10.1038/ncomms4252 ↗
38. Concerning electronegativity as a basic elemental property and why the periodic table is usually represented in its medium form10.1007/s10698-012-9151-3 ↗
39. Synergistic additive-mediated CVD growth and chemical modification of 2D materials10.1039/C9CS00348G ↗