Energy bandgap studies on copper chalcogenide semiconductor nanostructures using cohesive energy

Investigating the properties of semiconductor nanomaterials to understand the specific behavior of nano-scale materials and predicts novel advancement of functionalized semiconductor materials that are influenced by cohesive energy. Cohesive energy is strongly associated with semiconductor nanomaterials as the energy increment by the arrangement of atoms in a crystal which is one of the most fundamental properties. In this communication, the shape and size dependence over the energy bandgap of copper chalcogenide semiconductor nanomaterials is investigated. The theoretical model is derived on cohesive energy of semiconductor nanomaterials was equated with the bulk materials. For this research, we considered Cu2SnS3, Cu2SnSe3, Cu2SnTe3, Cu3SbSe4, and CuSbS2 chalcogenide matters to the study of shape and size dependent-energy bandgap. The model forecasts that the energy bandgap is inversely proportional to the size of the semiconductor. The present modeling results are correlated with established experimental data and underpin the model reported.