journal article·2018-02-27

Double-Channel Piezotronic Transistors for Highly Sensitive Pressure Sensing

Shuhai Liu, Longfei Wang, Zheng Wang, Yafeng Cai, Xiaolong Feng, Yong Qin, Zhong Lin Wang

ACS Nano· Volume 12· Issue 2
Publisher page

Abstract

Piezotronic transistors (PTs) that utilize inner crystal potential generated by interface piezoelectric polarization charges as the gate voltage have great potential applications in force/pressure-triggered or controlled electronic devices, sensors, human-machine communication, and microelectromechanical systems. Although the performance of PTs has been partially enhanced by exploring special materials with different geometries or high piezoelectricity, few studies have been focused on the structure design of PT itself to more effectively enhance the performance and structural reliability. Here, an integrated double-channel plane piezotronic transistor is invented as a high-performance pressure-sensing technology. Owing to the double-channel modulation and the plane structure, the PT has the merits of high pressure sensitivity (84.2-104.4 meV/MPa) and high structural reliability, which provides the opportunity for great applications, such as human-computer interfacing, biosensing, and health monitoring.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Gas Sensing Nanomaterials and Sensors · Advanced Sensor and Energy Harvesting Materials · Analytical Chemistry and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Advanced Materials and Nanotechnology, Xidian University, Shaanxi 710071, China

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China

College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China

Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University, Gansu 730000, China

Key Laboratory for Advanced Materials and Research Institute of Industrial Catalysis, East China University of Science and Technology, Shanghai 200237, China

Microsystems and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, Sichuan 610200, China

School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Funding

Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Chinese Academy of Sciences · Central Committee of the Communist Party of China

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