journal article·2019-05-28Open access

Degenerately Doped Transition Metal Dichalcogenides as Ohmic Homojunction Contacts to Transition Metal Dichalcogenide Semiconductors

Zhibin Gao, Zhixian Zhou, David Tománek

ACS Nano· Volume 13· Issue 5

Abstract

In search of an improved strategy to form low-resistance contacts to MoS2 and related semiconducting transition metal dichalcogenides, we use ab initio density functional electronic structure calculations in order to determine the equilibrium geometry and electronic structure of MoO3/MoS2 and MoO2/MoS2 bilayers. Our results indicate that, besides a rigid band shift associated with charge transfer, the presence of molybdenum oxide modifies the electronic structure of MoS2 very little. We find that the charge transfer in the bilayer provides a sufficient degree of hole doping to MoS2, resulting in a highly transparent contact region.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States

Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, 200092 Shanghai, People’s Republic of China

Physics and Astronomy Department, Wayne State University, Detroit, Michigan 48201, United States

Mandelstam Institute for Theoretical Physics and School of Physics, University of the Witwatersrand, 2050 Johannesburg, South Africa

Funding

Air Force Office of Scientific Research · Division of Electrical, Communications and Cyber Systems · China Scholarship Council · Wayne State University · Division of Materials Research

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