DataVXChalcogenide LettersPaper
journal article·2023-02-23Open access

Mechanical stability parameters of chalcogenides and pnictides based optoelectronic materials

Department of Physics, B. S. A. College, Mathura 281004, India, R. C. Gupta, P. Varshney, Department of Physics, G.G.I.C., Iglas 202124, India, Pravesh, Department of Electronics and Communication Engineering, KIET Groups of Institutions, Ghaziabad 201206, India, M. Lal, Department of Physics, Government Degree College, Una, Himachal Pradesh 174303, India, D. Kumar, Department of Chemical Engineering, Banasthali Vidyapith, Rajasthan 304022, Indi, K. Singh, Department of Physics, B. S. A. College, Mathura 281004, India, A. S. Verma, Division of Research & Innovation, School of Applied and Life Sciences, Uttaranchal University, Uttarakhand, Dehradun 248007, India

Chalcogenide Letters· Volume 20· Issue 2
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Abstract

A study of experimental data reveals that the bulk modulus of chalcogenides and pnictides based chalcopyrites (AIIBIVC2 V and AI BIIIC2 VI) can be explained by a simple scaling rule that rely only on the crystal ionicity, ionic charge product, and the melting temperature. PVV theory of crystal ionicity, temperature dependence of elasticity and product of ionic charge theory are taken into account for the study. Based on this result, a simple microhardnessbulk modulus relation is applied to evaluate the microhardness of the complex compounds; which correspond well with the experimental data and other published results. The proposed findings support in the modeling of emerging semiconductor materials and even understanding of their mechanical properties for optoelectronics, photovoltaic, electromagnetic (EM) screening, and spintronic applications. PACS: 62.20.-x; 62.20.Qp
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Electronic materials

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces · Phase-change materials and chalcogenides

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