journal article·2019-08-27

Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with in Situ Aluminum Modification toward Ultrahigh Gain Complementary Inverters

Dianyu Qi, Cheng Han, Ximing Rong, Xiu-Wen Zhang, Manish Chhowalla, Andrew T. S. Wee, Wenjing Zhang

ACS Nano· Volume 13· Issue 8
Publisher page

Abstract

Semiconducting molybdenum ditelluride (2H-MoTe2), a two-dimensional (2D) transition metal dichalcogenide, has attracted extensive research attention due to its favorable physical properties for future electronic devices, such as appropriate bandgap, ambipolar transport characteristic, and good chemical stability. The rational tuning of its electronic properties is a key point to achieve MoTe2-based complementary electronic and optoelectronic devices. Herein, we demonstrate the dynamic and effective control of the electronic properties of few-layer MoTe2, through the in situ surface modification with aluminum (Al) adatoms, with a view toward high-performance complementary inverter devices. MoTe2 is found to be significantly electron doped by Al, exhibiting a continuous transport transition from p-dominated ambipolar to n-type unipolar with enhanced electron mobility. Using a spatially controlled Al doping technique, both p- and n-channels are established on a single MoTe2 nanosheet, which gives complementary inverters with a record-high gain of ∼195, which stands out in the 2D family of materials due to the balanced p- and n-transport in Al-modified MoTe2. Our studies coupled with the tunable nature of in situ modification enable MoTe2 to be a promising candidate for high-performance complementary electronics.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore

Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, China

Department of Materials Science and Metallurgy, Cambridge University, 27 Charles Babbage Road, Cambridge, CB3 0FS, U.K.

Centre for Advanced 2D Materials, National University of Singapore, Block S14, 6 Science Drive 2, Singapore 117546, Singapore

Funding

Agency for Science, Technology and Research · Ministry of Education - Singapore · National Natural Science Foundation of China · Shenzhen University · Educational Commission of Guangdong Province · Guangdong Province · Fundamental Research Foundation of Shenzhen · Shenzhen Science and Technology Innovation Commission

References (64)

Show source-provided references
1. 10.1038/nnano.2012.19310.1038/nnano.2012.193 ↗
2. 10.1038/nmat184910.1038/nmat1849 ↗
3. 10.1039/C4CS00257A10.1039/C4CS00257A ↗
4. 10.1021/nl200758b10.1021/nl200758b ↗
5. 10.1103/RevModPhys.81.10910.1103/RevModPhys.81.109 ↗
6. 10.1038/nnano.2016.17110.1038/nnano.2016.171 ↗
7. 10.1038/nnano.2016.4210.1038/nnano.2016.42 ↗
8. 10.1038/nnano.2014.3510.1038/nnano.2014.35 ↗
9. 10.1038/nmat429910.1038/nmat4299 ↗
10. 10.1002/anie.20170501210.1002/anie.201705012 ↗
11. 10.1021/jacs.6b1323810.1021/jacs.6b13238 ↗
12. 10.1038/nature2404310.1038/nature24043 ↗
13. 10.1126/science.aab317510.1126/science.aab3175 ↗
14. 10.1021/acs.nanolett.6b0519910.1021/acs.nanolett.6b05199 ↗
15. 10.1038/nature1181210.1038/nature11812 ↗
16. 10.1021/nl504500710.1021/nl5045007 ↗
17. 10.1021/nl502557g10.1021/nl502557g ↗
18. 10.1021/acsami.6b0203610.1021/acsami.6b02036 ↗
19. 10.1002/adma.20130584510.1002/adma.201305845 ↗
20. 10.1021/nn501013c10.1021/nn501013c ↗
21. 10.1021/nn506521p10.1021/nn506521p ↗
22. 10.1088/2053-1583/1/2/02100210.1088/2053-1583/1/2/021002 ↗
23. 10.1021/acs.nanolett.5b0321810.1021/acs.nanolett.5b03218 ↗
24. 10.1038/ncomms1447410.1038/ncomms14474 ↗
25. 10.1038/ncomms764710.1038/ncomms7647 ↗
26. 10.1038/nmat208210.1038/nmat2082 ↗
27. 10.1021/nl400044m10.1021/nl400044m ↗
28. 10.1021/nl303583v10.1021/nl303583v ↗
29. 10.1021/nl404350510.1021/nl4043505 ↗
30. 10.1039/C8CS00024G10.1039/C8CS00024G ↗
31. 10.1002/adma.20170179810.1002/adma.201701798 ↗
32. 10.1002/adfm.20170453910.1002/adfm.201704539 ↗
33. 10.1002/adma.20160643310.1002/adma.201606433 ↗
34. 10.1002/adma.20170699510.1002/adma.201706995 ↗
35. 10.1126/science.aaa648610.1126/science.aaa6486 ↗
36. 10.1021/acs.nanolett.7b0090310.1021/acs.nanolett.7b00903 ↗
37. 10.1103/PhysRevB.84.20532510.1103/PhysRevB.84.205325 ↗
38. 10.1021/nn500760710.1021/nn5007607 ↗
39. 10.1063/1.310332710.1063/1.3103327 ↗
40. 10.1002/adfm.20160463810.1002/adfm.201604638 ↗
41. 10.1021/acsnano.7b0498410.1021/acsnano.7b04984 ↗
42. 10.1021/acsnano.5b0098510.1021/acsnano.5b00985 ↗
43. 10.1016/j.orgel.2006.06.00110.1016/j.orgel.2006.06.001 ↗
44. 10.1021/ja107046s10.1021/ja107046s ↗
45. 10.1063/1.477428710.1063/1.4774287 ↗
46. 10.1038/nphys331410.1038/nphys3314 ↗
47. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
48. 10.1103/PhysRevB.47.55810.1103/PhysRevB.47.558 ↗
49. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
50. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
51. 10.1103/PhysRevB.13.518810.1103/PhysRevB.13.5188 ↗
52. 10.1002/adma.20187040210.1002/adma.201870402 ↗
53. 10.1021/acs.nanolett.5b0327810.1021/acs.nanolett.5b03278 ↗
54. 10.1021/acs.nanolett.5b0174610.1021/acs.nanolett.5b01746 ↗
55. 10.1021/nn203715c10.1021/nn203715c ↗
56. 10.1021/nl302015v10.1021/nl302015v ↗
57. 10.1021/acs.nanolett.6b0273910.1021/acs.nanolett.6b02739 ↗
58. 10.1021/nn500992910.1021/nn5009929 ↗
59. 10.1021/acs.nanolett.5b0066810.1021/acs.nanolett.5b00668 ↗
60. 10.1021/acsnano.5b0641910.1021/acsnano.5b06419 ↗
61. 10.1002/adma.20150387210.1002/adma.201503872 ↗
62. 10.1038/nnano.2016.11510.1038/nnano.2016.115 ↗
63. 10.1038/nnano.2017.20810.1038/nnano.2017.208 ↗
64. 10.1088/2053-1583/3/1/01100610.1088/2053-1583/3/1/011006 ↗