journal article·2019-06-25

Shape Engineering of InP Nanostructures by Selective Area Epitaxy

Naiyin Wang, Xiaoming Yuan, Xu Zhang, Qian Gao, Bijun Zhao, Li Li, Mark Lockrey, Hark Hoe Tan, Chennupati Jagadish, Philippe Caroff

ACS Nano· Volume 13· Issue 6
Publisher page

Abstract

Greater demand for III-V nanostructures with more sophisticated geometries other than nanowires is expected because of the recent intensive investigation of nanowire networks that show great potential in all-optical logic gates, nanoelectronics, and quantum computing. Here, we demonstrate highly uniform arrays of InP nanostructures with tunable shapes, such as membrane-, prism-, and ring-like shapes, which can be simultaneously grown by selective area epitaxy. Our in-depth investigation of shape evolution confirms that the shape is essentially determined by pattern confinement and the minimization of total surface energy. After growth optimization, all of the different InP nanostructures grown under the same growth conditions show perfect wurtzite structure regardless of the geometry and strong and homogeneous photon emission. This work expands the research field in terms of producing nanostructures with the desired shapes beyond the limits of nanowires to satisfy various requirements for nanoelectronics, optoelectronics, and quantum device applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Nanowire Synthesis and Applications · Silicon Nanostructures and Photoluminescence · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia

Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China

National Center for International Joint Research of Electronic Materials and Systems, Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering, Zhengzhou University, Zhengzhou, Henan 450052, P. R. China

Australian National Fabrication Facility ACT Node, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia

Funding

Central South University · Natural Science Foundation of?Hunan Province · Australian Research Council · China Scholarship Council · National Natural Science Foundation of China · Australian National University

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