journal article·2018-02-27

Direct Observation of Semiconductor–Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization

Bo Lei, Yuanyuan Pan, Zehua Hu, Jialin Zhang, Du Xiang, Yue Zheng, Rui Guo, Cheng Han, Lianhui Wang, Jing Lu, Li Yang, Wei Chen

ACS Nano· Volume 12· Issue 2
Publisher page

Abstract

Structures determine properties of materials, and controllable phase transitions are, therefore, highly desirable for exploring exotic physics and fabricating devices. We report a direct observation of a controllable semiconductor–metal phase transition in bilayer tungsten diselenide (WSe 2 ) with potassium (K) surface functionalization. Through the integration of in situ field-effect transistors, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy measurements, and first-principles calculations, we identify that the electron doping from K adatoms drives bilayer WSe 2 from a 2H phase semiconductor to a 1T′ phase metal. The phase transition mechanism is satisfactorily explained by the electronic structures and energy alignment of the 2H and 1T′ phases. This explanation can be generally applied to understand doping-induced phase transitions in two-dimensional (2D) structures. Finally, the associated dramatic changes of electronic structures and electrical conductance make this controllable semiconductor–metal phase transition of interest for 2D semiconductor-based electronic and optoelectronic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Advanced Thermoelectric Materials and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou, Jiang Su 215123, China

Department of Physics, National University of Singapore, 117542 Singapore

Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546

Department of Physics and Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States

State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China

Department of Chemistry, National University of Singapore, Singapore 117543

SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen 518060, China

Key Laboratory for Organic Electronics & Information Displays (KLOEID), Institute of Advanced Materials (IAM), Jiangsu National Syngerstic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts &Telecommunications, 9 Wenyuan Road, Nanjing 210023, China

Funding

Ministry of Science and Technology of the People's Republic of China · Division of Emerging Frontiers in Research and Innovation · Ministry of Education - Singapore · Natural Science Foundation of Jiangsu Province · China Scholarship Council · National Natural Science Foundation of China · Division of Materials Research

References (47)

Show source-provided references
1. 10.1007/s12274-016-1232-510.1007/s12274-016-1232-5 ↗
2. 10.1007/s12274-016-1386-110.1007/s12274-016-1386-1 ↗
3. 10.1038/ncomms201810.1038/ncomms2018 ↗
4. 10.1038/nnano.2013.10010.1038/nnano.2013.100 ↗
5. 10.1038/nnano.2008.26810.1038/nnano.2008.268 ↗
6. 10.1021/nn502153810.1021/nn5021538 ↗
7. 10.1021/nn305275h10.1021/nn305275h ↗
8. 10.1021/acs.nanolett.7b0076510.1021/acs.nanolett.7b00765 ↗
9. 10.1103/PhysRevLett.108.19680210.1103/PhysRevLett.108.196802 ↗
10. 10.1002/adfm.20160029210.1002/adfm.201600292 ↗
11. 10.1126/science.125681510.1126/science.1256815 ↗
12. 10.1038/nmat408010.1038/nmat4080 ↗
13. 10.1039/C5CS00151J10.1039/C5CS00151J ↗
14. 10.1021/jacs.6b1323810.1021/jacs.6b13238 ↗
15. 10.1038/s41467-017-00640-210.1038/s41467-017-00640-2 ↗
16. 10.1103/PhysRevB.92.16110710.1103/PhysRevB.92.161107 ↗
17. 10.1021/nl400044m10.1021/nl400044m ↗
18. 10.1002/adma.20160546110.1002/adma.201605461 ↗
19. 10.1021/jacs.5b0745210.1021/jacs.5b07452 ↗
20. 10.1063/1.494280210.1063/1.4942802 ↗
21. 10.1021/acs.nanolett.6b0134210.1021/acs.nanolett.6b01342 ↗
22. 10.1021/acs.chemmater.5b0098610.1021/acs.chemmater.5b00986 ↗
23. 10.1021/acsnano.6b0810910.1021/acsnano.6b08109 ↗
24. 10.1021/ja501686w10.1021/ja501686w ↗
25. 10.1021/acs.chemmater.6b0037910.1021/acs.chemmater.6b00379 ↗
26. 10.1038/nnano.2014.6410.1038/nnano.2014.64 ↗
27. 10.1021/nl201874w10.1021/nl201874w ↗
28. 10.1002/adma.20140180210.1002/adma.201401802 ↗
29. 10.1038/nchem.210810.1038/nchem.2108 ↗
30. 10.1021/acsnano.5b0239910.1021/acsnano.5b02399 ↗
31. 10.1088/1361-648X/aa63a710.1088/1361-648X/aa63a7 ↗
32. 10.1063/1.496163310.1063/1.4961633 ↗
33. 10.1039/C5CC00803D10.1039/C5CC00803D ↗
34. 10.1038/nnano.2014.8710.1038/nnano.2014.87 ↗
35. 10.1038/srep2666610.1038/srep26666 ↗
36. 10.1002/smll.20120291910.1002/smll.201202919 ↗
37. 10.1016/j.progsurf.2009.06.00210.1016/j.progsurf.2009.06.002 ↗
38. 10.1103/PhysRevB.77.23543010.1103/PhysRevB.77.235430 ↗
39. 10.1103/PhysRevLett.114.06300110.1103/PhysRevLett.114.063001 ↗
40. 10.1016/j.scriptamat.2015.05.01110.1016/j.scriptamat.2015.05.011 ↗
41. 10.1038/nature2404310.1038/nature24043 ↗
42. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
43. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
44. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
45. 10.1021/acs.nanolett.7b0090310.1021/acs.nanolett.7b00903 ↗
46. 10.1038/ncomms748510.1038/ncomms7485 ↗
47. 10.1002/anie.20170501210.1002/anie.201705012 ↗