journal article·2021-02-23

Efficiently Passivated PbSe Quantum Dot Solids for Infrared Photovoltaics

Sisi Liu, Kao Xiong, Kang Wang, Guijie Liang, Ming-Yu Li, Haodong Tang, Xiaokun Yang, Zhen Huang, Linyuan Lian, Manlin Tan, Kai Wang, Liang Gao, Haisheng Song, Daoli Zhang, Jianbo Gao, Xinzheng Lan, Jiang Tang, Jianbing Zhang

ACS Nano· Volume 15· Issue 2
Publisher page

Abstract

Infrared (IR) solar cells are promising devices for significantly improving the power conversion efficiency of common solar cells by harvesting the low-energy IR photons. PbSe quantum dots (QDs) are superior IR photon absorbing materials due to their strong quantum confinement and thus strong interdot electronic coupling. However, the high chemical activity of PbSe QDs leads to etching and poor passivation in ligand exchange, resulting in a high trap-state density and a high open circuit voltage (VOC) deficit. Here we develop a hybrid ligand co-passivation strategy to simultaneously passivate the Pb and Se sites; that is, halide anions passivate the Pb sites and Cd cations passivate the Se sites. The cation and anion hybrid passivation substantially improves the quality of PbSe QD solids, giving rise to an excellent trap-state control and prolonged carrier lifetime. A high VOC and a high short circuit current density (JSC) are achieved simultaneously in the IR QD solar cells based on this hybrid ligand treatment. Finally, a IR-PCE of 1.31% under the 1100-nm-filtered solar illumination is achieved in the PbSe QD solar cells, which is the highest IR-PCE for PbSe QD IR solar cells at present. Additionally, the PbSe QD devices show a high external quantum efficiency of 80% at ∼1295 nm.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China

Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang, Hubei 441053, China

School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China

Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Xueyuan Boulevard 1088, Shenzhen 518055, China

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China

Research Institute of Tsinghua University in Shenzhen, Shenzhen, Guangdong 518057, China

Ultrafast Photophysics of Quantum Devices, Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States

Funding

China Postdoctoral Science Foundation · Science, Technology and Innovation Commission of Shenzhen Municipality · National Natural Science Foundation of China · Hubei Province

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