DataVXChalcogenide LettersPaper
journal article·2025-09-15Open access

Advanced chalcogenide Ga2S3 coatings for reducing reflective loss and boosting efficiency in silicon photovoltaics

Department of Mechanical Engineering, G.Pulla Reddy Engineering College, Kurnool, Andhrapradesh, R. M. Reddy, J. A. Prakash, Department of Aeronautical Engineering, Nehru Institute of Engineering and Technology, Coimbatore, Tamil Nadu, A. Tonk, Department of Multidisciplinary Engineering, The NorthCap University, Gurugram, S. Karvendhan, Department of Mechanical Engineering, Velalar College of Engineering and Technology, Erode, G. Sivaraman, Department of Mechanical Engineering, Sona College of Technology, D. K. Patel, Department Mechanical Engineering, Sardar Patel College of Engineering, S. P. Dillibabu, Department of Mechanical Engineering, Vel Tech Rangarajan Dr. Sagunthala R&D Institute of Science and Technology, Avadi, Chennai, Tamil Nadu, 600062, S. Karthikeyan, Department of Mechanical Engineering, Erode Sengunthar Engineering College, Perundurai, 638057, India, T. Thirugnanasambandham, Department of Mechanical Engineering, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences (SIMATS), Saveetha University, Chennai 602105, Tamil Nadu

Chalcogenide Letters· Volume 22· Issue 9
Publisher pageOpen full text
Source abstract

Abstract

The current situation necessitates advancements in renewable energy as an alternative for conventional energy sources. Reflection loss in solar cells is a contributing factor to diminish the power conversion efficiency, which can be reduced by employing antireflective coatings. The current investigation focuses on improvement in photocurrent generation of monocrystalline silicon solar cells by employing Gallium sulfide (Ga2S3) as anti-reflective coatings (ARC). The RF sputter coating method has been used for Ga2S3 deposition at different coating durations (10, 20, 30, and 40 minutes). The transmittance, reflectance, I-V characteristics, electrical properties, and thermal behaviour of the Ga2S3 coatings on m-Si cells were analysed to determine the influence of the coatings. The incorporation of Ga2S3 led to enhanced power conversion efficiencies (PCEs) from the 16.38% to 21.80% under open conditions and from 18.58% to 24.33% under closed conditions. The Ga2S3 coating thickness for the GS3 sample was measured at 1.440 µm using FESEM. The minimum optical reflectance of 6.56% and maximum transmittance of 93.44% were achieved after 30 minutes of coating (GS3) within the 300 to 1200 nm wavelength range. The minimum electrical resistivity of a GS3 coated sample was measured as 5.33×10−3 Ω-cm. Ga2S3 coatings serve to reduce reflected losses and improve surface passivation.
Source: crossref · Quality: baseline

Research context

Electronic materialsMaterials processing

OpenAlex topics: Chalcogenide Semiconductor Thin Films · solar cell performance optimization · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (27)

Show source-provided references
1. [1] G. Wei, Shanghai electric power 4), 2006); https://doi.org/10.1049/cp:2006164810.1049/cp:20061648 ↗
2. [2] C.-H. Park, Y.-J. Ko, J.-H. Kim, H. Hong, Energies 13(10), 2020); https://doi.org/10.3390/en1310256810.3390/en13102568 ↗
3. [3] M.K.H. Rabaia, M.A. Abdelkareem, E.T. Sayed, K. Elsaid, K.-J. Chae, T. Wilberforce, A. Olabi, Science of The Total Environment 754(2021); https://doi.org/10.1016/j.scitotenv.2020.14198910.1016/j.scitotenv.2020.141989 ↗
4. [4] R. Al Afif, B. Linke, Energy 171(2019); https://doi.org/10.1016/j.energy.2019.01.08010.1016/j.energy.2019.01.080 ↗
5. [5] H. Al-Najjar, C. Pfeifer, R. Al Afif, H. J. El-Khozondar, Designs 4(3), 2020); https://doi.org/10.3390/designs403003210.3390/designs4030032 ↗
6. [6] J. Rath, Solar Energy Materials and Solar Cells 76(4), 2003); https://doi.org/10.1016/S0927- 0248(02)00258-110.1016/S0927-0248(02)00258-1 ↗
7. [7] A. Żabnieńska-Góra, N. Khordehgah, H. Jouhara, Renewable Energy 163(2021); https://doi.org/10.1016/j.renene.2020.10.12310.1016/j.renene.2020.10.123 ↗
8. [8] D. Chen, Solar Energy Materials and Solar Cells 68(3-4), 2001); https://doi.org/10.1016/S0927-0248(00)00365-210.1016/S0927-0248(00)00365-2 ↗
9. [9] K.T. Roro, N. Tile, B. Yalisi, M. De Gama, T. Wittes, T. Roberts, A. Forbes, 2011).
10. [10] D.N. Joshi, S. Atchuta, Y.L. Reddy, A.N. Kumar, S. Sakthivel, Solar Energy Materials and Solar Cells 200(2019); https://doi.org/10.1016/j.solmat.2019.110023 80610.1016/j.solmat.2019.110023 ↗
11. [11] C.-H. Sun, P. Jiang, B. Jiang, Applied Physics Letters 92(6), 2008); https://doi.org/10.1063/1.287008010.1063/1.2870080 ↗
12. [12] D.-S. Wuu, C.-C. Lin, C.-N. Chen, H.-H. Lee, J.-J. Huang, Thin Solid Films 584(2015); https://doi.org/10.1016/j.tsf.2015.01.04210.1016/j.tsf.2015.01.042 ↗
13. [13] H. Khmissi, B. Azeza, M. Bouzidi, Z. Al-Rashidi, Engineering, Technology & Applied Science Research 14(3), 2024); https://doi.org/10.48084/etasr.737510.48084/etasr.7375 ↗
14. [14] J.W. Leem, J.S. Yu, Rsc Advances 5(75), 2015); https://doi.org/10.1039/C5RA05991G10.1039/C5RA05991G ↗
15. [15] H.K. Raut, S.S. Dinachali, A.Y. He, V.A. Ganesh, M.S. Saifullah, J. Law, S. Ramakrishna, Energy & Environmental Science 6(6), 2013); https://doi.org/10.1039/c3ee24037a10.1039/c3ee24037a ↗
16. [16] A. Ibrahim, A. El-Amin, International Journal of Renewable Energy Research 2(3), 2012).
17. [17] K. Ali, S.A. Khan, M.M. Jafri, International Journal of Electrochemical Science 9(12), 2014); https://doi.org/10.1016/S1452-3981(23)11011-X10.1016/S1452-3981(23)11011-X ↗
18. [18] A.S. Sarkın, N. Ekren, Ş. Sağlam, Solar energy 199(2020); https://doi.org/10.1016/j.solener.2020.01.08410.1016/j.solener.2020.01.084 ↗
19. [19] L. Xu, X. Li, Y. Chen, F. Xu, Applied Surface Science 257(9), 2011); https://doi.org/10.1016/j.apsusc.2010.11.17010.1016/j.apsusc.2010.11.170 ↗
20. [20] Z. Liang, W. Li, B. Dong, Y. Sun, H. Tang, L. Zhao, S. Wang, Chemical Physics Letters 716(2019); https://doi.org/10.1016/j.cplett.2018.12.03010.1016/j.cplett.2018.12.030 ↗
21. [21] P. Gu, X. Zhu, J. Li, H. Wu, D. Yang, Journal of Materials Science: Materials in Electronics 29(2018); https://doi.org/10.1007/s10854-018-9599-610.1007/s10854-018-9599-6 ↗
22. [22] P. Hu, Y. Liu, L. Fu, L. Cao, D. Zhu, Applied Physics A 80(2005); https://doi.org/10.1007/s00339-004-3187-810.1007/s00339-004-3187-8 ↗
23. [23] A.H.K. Mahmoud, F.M. Korany, C. Tharwat, M. Hussein, M.A. Swillam, S.S.A. Obayya, M.F.O. Hameed, Journal of Photonics for Energy 10(4), 2020); https://doi.org/10.1117/1.JPE.10.04550210.1117/1.JPE.10.045502 ↗
24. [24] M.M. Diop, A. Diaw, N. Mbengue, O. Ba, M. Diagne, O.A. Niasse, B. Ba, J. Sarr, Materials Sciences and Applications 9(08), 2018).
25. [25] W. Wang, L. Qi, Advanced Functional Materials 29(25), 2019); https://doi.org/10.1002/adfm.20180727510.1002/adfm.201807275 ↗
26. [26] N. Almakayeel, G.V. Kaliyannan, R. Gunasekaran, R. Rathanasamy, Journal of Materials Research and Technology 2024).
27. [27] A. Alshammari, E. Almatrafi, M. Rady, Solar Energy 273(2024); https://doi.org/10.1016/j.solener.2024.11254510.1016/j.solener.2024.112545 ↗