journal article·2017-11-28

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

Che-Yu Lin, Xiaodan Zhu, Shin-Hung Tsai, Shiao-Po Tsai, Sidong Lei, Yumeng Shi, Lain-Jong Li, Shyh-Jer Huang, Wen-Fa Wu, Wen-Kuan Yeh, Yan-Kuin Su, Kang L. Wang, Yann-Wen Lan

ACS Nano· Volume 11· Issue 11
Publisher page

Abstract

High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe 2 –MoS 2 junctions as the conducting p–n channel is demonstrated. Both lateral n–p–n and p–n–p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.
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Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States

SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen 518060, China

Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Kingdom of Saudi Arabia

Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

National Nano Device Laboratories, National Applied Research Laboratories, Hsinchu 30078, Taiwan

Department of Electrical Engineering, Kun Shan University, Tainan 710, Taiwan

Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan

Funding

Ministry of Science and Technology, Taiwan

References (44)

Show source-provided references
1. Sze S. M. · 2007
2. 10.1109/JRPROC.1957.27834810.1109/JRPROC.1957.278348 ↗
3. 10.1109/PROC.1982.1222610.1109/PROC.1982.12226 ↗
4. 10.1109/MCS.1996.50630410.1109/MCS.1996.506304 ↗
5. van Bezooijen A. · 2003
6. 10.1109/22.66866510.1109/22.668665 ↗
7. 10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
8. 10.1038/nnano.2014.20710.1038/nnano.2014.207 ↗
9. 10.1038/nnano.2012.19310.1038/nnano.2012.193 ↗
10. 10.1063/1.9557410.1063/1.95574 ↗
11. 10.1143/JJAP.24.L46610.1143/JJAP.24.L466 ↗
12. 10.1063/1.331586810.1063/1.3315868 ↗
13. 10.1021/acs.nanolett.5b0376810.1021/acs.nanolett.5b03768 ↗
14. 10.1126/science.110289610.1126/science.1102896 ↗
15. 10.1016/j.flatc.2016.11.00310.1016/j.flatc.2016.11.003 ↗
16. 10.1073/pnas.050284810210.1073/pnas.0502848102 ↗
17. 10.1103/PhysRevLett.105.13680510.1103/PhysRevLett.105.136805 ↗
18. 10.1038/nnano.2014.15010.1038/nnano.2014.150 ↗
19. 10.1126/science.121846110.1126/science.1218461 ↗
20. 10.1038/nature1538710.1038/nature15387 ↗
21. 10.1038/nnano.2014.2510.1038/nnano.2014.25 ↗
22. 10.1038/nnano.2014.1410.1038/nnano.2014.14 ↗
23. 10.1038/nnano.2014.2610.1038/nnano.2014.26 ↗
24. 10.1038/srep0154910.1038/srep01549 ↗
25. 10.1073/pnas.140543511110.1073/pnas.1405435111 ↗
26. 10.1038/ncomms724210.1038/ncomms7242 ↗
27. 10.1126/science.aab409710.1126/science.aab4097 ↗
28. 10.1021/nn504229z10.1021/nn504229z ↗
29. Griffiths D. J. · 2005
30. 10.1149/05807.0281ecst10.1149/05807.0281ecst ↗
31. 10.1109/5.9207210.1109/5.92072 ↗
32. Lundstrom, M.Note on Heterostructure Fundamentals; 1995; p14.
33. 10.1103/PhysRevB.89.08140610.1103/PhysRevB.89.081406 ↗
34. 10.1126/science.123554710.1126/science.1235547 ↗
35. 10.1021/nn507443510.1021/nn5074435 ↗
36. Salmani-Jelodar, M.; Tan, Y.; Klimeck, G.Single Layer MoS2Band Structure and Transport;ISDRS, 2011; http://www.ece.umd.edu/ISDRS2011.
37. 10.1016/j.physb.2012.08.03410.1016/j.physb.2012.08.034 ↗
38. 10.1103/PhysRevLett.110.23660110.1103/PhysRevLett.110.236601 ↗
39. 10.1021/acs.nanolett.6b0144410.1021/acs.nanolett.6b01444 ↗
40. 10.1016/S0038-1101(02)00199-510.1016/S0038-1101(02)00199-5 ↗
41. 10.1109/LED.2004.84273110.1109/LED.2004.842731 ↗
42. 10.1109/IEDM.1993.34739310.1109/IEDM.1993.347393 ↗
43. 10.1109/16.4088710.1109/16.40887 ↗
44. 10.1109/LED.2003.81140010.1109/LED.2003.811400 ↗