journal article·2016-04-26

Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication

Benoit Guilhabert, Antonio Hurtado, Dimitars Jevtics, Qian Gao, Hark Hoe Tan, Chennupati Jagadish, Martin D. Dawson

ACS Nano· Volume 10· Issue 4
Publisher page

Abstract

Accurate positioning and organization of indium phosphide (InP) nanowires (NWs) with lasing emission at room temperature is achieved using a nanoscale transfer printing (TP) technique. The NWs retained their lasing emission after their transfer to targeted locations on different receiving substrates (e.g., polymers, silica, and metal surfaces). The NWs were also organized into complex spatial patterns, including 1D and 2D arrays, with a controlled number of elements and dimensions. The developed TP technique enables the fabrication of bespoke nanophotonic systems using NW lasers and other NW devices as building blocks.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Nanowire Synthesis and Applications · Photonic and Optical Devices · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre, 99 George Street, G1 1RD Glasgow, U.K.

Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia

Funding

Engineering and Physical Sciences Research Council · Australian Research Council · University of Strathclyde

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