journal article·2010-06-22

Molecular Self-Assembly at Bare Semiconductor Surfaces: Cooperative Substrate−Molecule Effects in Octadecanethiolate Monolayer Assemblies on GaAs(111), (110), and (100)

Christine L. McGuiness, Gregory A. Diehl, Daniel Blasini, Detlef-M. Smilgies, M. Zhu, Nitin Samarth, Tobias Weidner, Nirmalya Ballav, Michael Zharnikov, David L. Allara

ACS Nano· Volume 4· Issue 6
Publisher page

Abstract

The structures of self-assembled monolayers formed by chemisorption of octadecanethiol onto the surfaces of GaAs(001), (110), (111-A)-Ga, and (111-B)-As have been characterized in detail by a combination of X-ray photoelectron, near-edge X-ray absorption fine structure, and infrared spectroscopies and grazing incidence X-ray diffraction. In all cases, the molecular lattices are ordered with hexagonal symmetry, even for the square and rectangular intrinsic substrate (001) and (110) lattices, and the adsorbate lattice spacings are all incommensurate with their respective intrinsic substrate lattices. These results definitively show that the monolayer organization is driven by intermolecular packing forces to assemble in a hexagonal motif, such as would occur in the approach to a limit for an energetically featureless surface. The accompanying introduction of strain into the soft substrate surface lattice via strong S substrate bonds forces the soft substrate lattice to compliantly respond, introducing quasi-2D strain. A notably poorer organization for the (111-A)-Ga case compared to the (111-B)-As and other faces indicates that that the Ga-terminated surface lattice is more resistant to adsorbate packing-induced stress. Overall, the results show that surface molecular self-assembly must be considered as a strongly cooperative process between the substrate surface and the adsorbate and that inorganic substrate surfaces should not be considered as necessarily rigid when strong intermolecular adsorbate packing forces are operative.
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Research context

OpenAlex topics: Molecular Junctions and Nanostructures · Semiconductor materials and devices · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Departments of Chemistry and Materials Science & Engineering, The Pennsylvania State University, 104 Chemistry Building, University Park, Pennsylvania 16801

Department of Chemistry, Cornell University, Baker Laboratory, Ithaca, New York 14853

Cornell High Energy Synchrotron Source, 200 L Wilson Lab, Ithaca, New York 14853

Department of Physics, The Pennsylvania State University, 104 Davey, University Park, Pennsylvania 16801

Angewandte Physikalische Chemie, Universität Heidelberg, Im Neuenheimer Feld 253, D-69120 Heildelberg, Germany

References (100+)

Show source-provided references
1. Kacker N. · Langmuir · 1997 · 13 · 636610.1021/la970917k ↗
2. Parikh A. N. · J. Phys. Chem. · 1995 · 99 · 999610.1021/j100024a049 ↗
3. Allara D. L. · J. Chem. Phys. · 1994 · 100 · 176110.1063/1.466604 ↗
4. Abbott N. L. · Langmuir · 1995 · 11 · 1610.1021/la00001a005 ↗
5. Haran A. · Science · 1994 · 263 · 94810.1126/science.263.5149.948 ↗
6. Salomon A. · Adv. Mater. · 2003 · 15 · 188110.1002/adma.200306091 ↗
7. Mrksich M. · Annu. Rev. Biophys. Biomol. Struct. · 1996 · 25 · 5510.1146/annurev.bb.25.060196.000415 ↗
8. Whaley S. R. · Nature · 2000 · 405 · 66510.1038/35015043 ↗
9. Kaganer V. M. · Rev. Mod. Phys. · 1999 · 71 · 77910.1103/RevModPhys.71.779 ↗
10. Kaganer V. M. · J. Chem. Phys. · 1995 · 102 · 941210.1063/1.468809 ↗
11. Dudowicz J. · J. Chem. Phys. · 2009 · 130 · 22490610.1063/1.3148893 ↗
12. Love J. C. · Chem. Rev. · 2005 · 105 · 110310.1021/cr0300789 ↗
13. Ulman A. · Chem. Rev. · 1996 · 96 · 153310.1021/cr9502357 ↗
14. Linford M. R. · J. Am. Chem. Soc. · 1993 · 115 · 1263110.1021/ja00079a071 ↗
15. Linford M. R. · J. Am. Chem. Soc. · 1995 · 117 · 314510.1021/ja00116a019 ↗
16. Smilgies D.-M. · Phys. Rev. B · 2009 · 79 · 235413-10
17. Schollmeyer H. · Langmuir · 2003 · 19 · 504210.1021/la026989f ↗
18. Bigelow W. C. · J. Colloid. Sci. · 1946 · 101 · 201
19. Maoz R. · Colloid Interface Sci. · 1984 · 100 · 46510.1016/0021-9797(84)90452-1 ↗
20. Parikh A. N. · J. Phys. Chem. · 1994 · 98 · 757710.1021/j100082a031 ↗
21. Tidswell I. M. · J. Chem. Phys. · 1991 · 95 · 285410.1063/1.460886 ↗
22. Nuzzo R. G. · J. Am. Chem. Soc. · 1987 · 109 · 73310.1021/ja00237a017 ↗
23. Nuzzo R. G. · J. Am. Chem. Soc. · 1990 · 112 · 55810.1021/ja00158a012 ↗
24. Schreiber F. · Prog. Surf. Sci. · 2000 · 65 · 15110.1016/S0079-6816(00)00024-1 ↗
25. Camillone N. · J. Chem. Phys. · 1991 · 94 · 849310.1063/1.460082 ↗
26. Camillone N. · J. Chem. Phys. · 1994 · 101 · 1103110.1063/1.467854 ↗
27. Poirier G. E. · Science · 1996 · 272 · 114510.1126/science.272.5265.1145 ↗
28. Torrelles X. · Langmuir · 2004 · 20 · 939610.1021/la048979f ↗
29. Fenter P. · Phys. Rev. Lett. · 1993 · 70 · 244710.1103/PhysRevLett.70.2447 ↗
30. Poirier G. E. · Langmuir · 1997 · 13 · 201910.1021/la960777z ↗
31. Donhauser Z. J. · J. Am. Chem. Soc. · 2003 · 125 · 1146210.1021/ja035036g ↗
32. Barrena E. · J. Chem. Phys. · 1999 · 111 · 979710.1063/1.480316 ↗
33. Poirier G. E. · Langmuir · 1999 · 15 · 116710.1021/la981374x ↗
34. Han S. M. · J. Am. Chem. Soc. · 2001 · 123 · 242210.1021/ja993816c ↗
35. He J. L. · J. Am. Chem. Soc. · 1998 · 120 · 266010.1021/ja974119s ↗
36. Ardalan P. · Langmuir · 2009 · 25 · 201310.1021/la803468e ↗
37. Buriak J. M. · Chem. Rev. · 2002 · 102 · 127110.1021/cr000064s ↗
38. McGuiness C. L. · J. Phys. Chem. C · 2007 · 111 · 422610.1021/jp065173a ↗
39. Sheen C. W. · J. Am. Chem. Soc. · 1992 · 114 · 151410.1021/ja00030a076 ↗
40. Adlkofer K. · J. Phys. Chem. B · 2003 · 107 · 58710.1021/jp0267813 ↗
41. Adlkofer K. · J. Phys. Chem. B · 2003 · 107 · 1173710.1021/jp0356719 ↗
42. Lunt S. R. · J. Vac. Sci. Technol., B · 1991 · 9 · 233310.1116/1.585743 ↗
43. Dorsten J. F. · Appl. Phys. Lett. · 1995 · 66 · 175510.1063/1.113357 ↗
44. Ke Y. · Surf. Sci. · 1998 · 415 · 2910.1016/S0039-6028(98)00435-X ↗
45. Adlkofer K. · Langmuir · 2001 · 17 · 426710.1021/la001507q ↗
46. Li W. J. · J. Phys. Chem. B · 2005 · 109 · 625210.1021/jp0501648 ↗
47. Loo Y. L. · Nano Lett. · 2003 · 3 · 91310.1021/nl034207c ↗
48. Baum T. · Langmuir · 1999 · 15 · 857710.1021/la991124w ↗
49. Jun Y. · Langmuir · 2006 · 22 · 362710.1021/la052473v ↗
50. Rosu D. M. · Langmuir · 2009 · 25 · 91910.1021/la8026557 ↗
51. Stine R. · J. Electron Spectrosc. Relat. Phenom. · 2009 · 172 · 4210.1016/j.elspec.2009.02.001 ↗
52. Petrovykh D. Y. · Langmuir · 2009 · 25 · 1218510.1021/la804314j ↗
53. McGuiness C. L. · ACS Nano · 2007 · 1 · 3010.1021/nn7000596 ↗
54. Dubois L. H. · J. Chem. Phys. · 1993 · 98 · 67810.1063/1.464613 ↗
55. Chidsey C. E. D. · J. Chem. Phys. · 1989 · 91 · 442110.1063/1.456776 ↗
56. Alves C. A. · J. Am. Chem. Soc. · 1992 · 114 · 122210.1021/ja00030a015 ↗
57. Poirier G. E. · Chem. Rev. · 1997 · 97 · 111710.1021/cr960074m ↗
58. Camillone N. · J. Chem. Phys. · 1993 · 98 · 350310.1063/1.464071 ↗
59. Ohtake A. · Phys. Rev. B · 2001 · 64 · 04531810.1103/PhysRevB.64.045318 ↗
60. Laibinis P. E. · J. Am. Chem. Soc. · 1991 · 113 · 715210.1021/ja00019a011 ↗
61. Love J. C. · J. Am. Chem. Soc. · 2003 · 125 · 259710.1021/ja028692+ ↗
62. Li Z. Y. · Langmuir · 2003 · 19 · 674410.1021/la034245b ↗
63. McGuiness C. L. · J. Am. Chem. Soc. · 2006 · 128 · 523110.1021/ja058657d ↗
64. Camillone N. · J. Chem. Phys. · 1993 · 98 · 423410.1063/1.465030 ↗
65. Ranke W. · Prog. Surf. Sci. · 1981 · 10 · 110.1016/0079-6816(81)90005-8 ↗
66. Xue Q. K. · Prog. Surf. Sci. · 1997 · 56 · 110.1016/S0079-6816(97)00033-6 ↗
67. Blakemore J. S. · J. Appl. Phys. · 1982 · 53 · R12310.1063/1.331665 ↗
68. William R. E. · 1984
69. Ding X. M. · J. Appl. Phys. · 2006 · 99 · 5470110.1063/1.2178659 ↗
70. Voznyy O. · J. Phys. Chem. B · 2006 · 110 · 2361910.1021/jp064675l ↗
71. Wieliczka D. M. · J. Vac. Sci. Technol., A · 2006 · 24 · 175610.1116/1.2218850 ↗
72. Voznyy O. · Langmuir · 2008 · 24 · 1329910.1021/la8010635 ↗
73. Voznyy O. · J. Phys. Chem. C · 2008 · 112 · 372610.1021/jp075968x ↗
74. Camillone N. · Surf. Sci. · 2000 · 453 · 8310.1016/S0039-6028(00)00308-3 ↗
75. Ohno H. · Jpn. J. Appl. Phys., Part 1 · 1995 · 34 · 138110.1143/JJAP.34.1381 ↗
76. Moumanis K. · J. Appl. Phys. · 2006 · 100 · 034702-510.1063/1.2234538 ↗
77. Rodriguez L. M. · J. Am. Chem. Soc. · 2007 · 129 · 780710.1021/ja069007s ↗
78. Zerulla D. · Langmuir · 2002 · 18 · 539210.1021/la0108205 ↗
79. Zerulla D. · Langmuir · 1999 · 15 · 528510.1021/la980300i ↗
80. Zerulla D. · Chem. Phys. Lett. · 1999 · 311 · 810.1016/S0009-2614(99)00827-1 ↗
81. Lindau I. · J. Electron Spectrosc. Relat. Phenom. · 1974 · 3 · 40910.1016/0368-2048(74)80024-1 ↗
82. Powell C. J. · Surf. Sci. · 1974 · 44 · 2910.1016/0039-6028(74)90091-0 ↗
83. Shaporenko A. · J. Phys. Chem. B · 2004 · 108 · 1796410.1021/jp040474a ↗
84. These measurements were performed on a monochromatic Al Kα source instrument (Kratos, Axis Ultra; England) operating with a pass energy of 20 eV.
85. Stohr J. · 199210.1007/978-3-662-02853-7 ↗
86. Vaterlein P. · J. Chem. Phys. · 1998 · 108 · 331310.1063/1.475729 ↗
87. Scholl A. · Chem. Phys. Lett. · 2003 · 370 · 83410.1016/S0009-2614(03)00215-X ↗
88. Batson P. E. · Phys. Rev. B · 1993 · 48 · 260810.1103/PhysRevB.48.2608 ↗
89. Bagus P. S. · Chem. Phys. Lett. · 1996 · 248 · 12910.1016/0009-2614(95)01315-6 ↗
90. Weiss K. · J. Chem. Phys. · 1999 · 111 · 683410.1063/1.479976 ↗
91. Outka D. A. · J. Chem. Phys. · 1988 · 88 · 407610.1063/1.453862 ↗
92. Hahner G. · Phys. Rev. Lett. · 1991 · 67 · 85110.1103/PhysRevLett.67.851 ↗
93. Hahner G. · J. Vac. Sci. Technol., A · 1992 · 10 · 275810.1116/1.577906 ↗
94. Snyder R. G. · Spectrochim. Acta · 1978 · 34 · 39510.1016/0584-8539(78)80167-6 ↗
95. Nuzzo R. G. · J. Chem. Phys. · 1990 · 93 · 76710.1063/1.459528 ↗
96. Additional in plane, sharp (Δqxy∼ 0.01 Å−1) Bragg peaks atqxy= 1.39, 1.41, and 1.68 Å−1were also observed growing in on the radial maps after significant (∼12−24 h) X-ray beam exposure. These new, sharp diffraction peaks are presumably due to a new X-ray-induced monolayer structure, the emergence of which did not affect the broader, initial peaks associated with the main monolayer structure. Similar results have also previously been observed in the GIXRD characterization of ODT, dodecanethiol (DDT), and 4′-methylbiphenyl-4-thiol samples (MBT) (ref52). The new, sharp Bragg reflections are present for all ODT SAMs analyzed, regardless of the GaAs surface examined, and seem to be more prevalent on samples where the thiolate monolayers self assemble well (i.e., on the DDT, MBT, and ODT on GaAs(111-A)-Ga samples). Azimuthal scans of these sharp diffraction peaks are observed to have ring-like structures typically associated with powder diffraction patterns from unoriented crystallites. At present, the full effect of these peaks is not known, but work is underway to understand their growth and origin. Given the large difference in Δqxycompared to the main monolayer reflections, these peaks do not appear to be related to the main, pristine monolayer structure.
97. The Scherrer equation,L= 0.89λ/Bcos θB, where λ is the X-ray wavelength, θBis the Bragg angle of the monolayer, andBis the fwhm of the scattering angle 2θB, was used to determine the domain size.
98. Ruppalt L. B. · J. Vac. Sci. Technol., B · 2004 · 22 · 200510.1116/1.1768192 ↗
99. Scimeca T. · Phys. Rev. B · 1991 · 44 · 1292710.1103/PhysRevB.44.12927 ↗
100. Ohno T. · Phys. Rev. B · 1990 · 42 · 1119410.1103/PhysRevB.42.11194 ↗