DataVXChalcogenide LettersPaper
journal article·2022-10-25Open access

Study the properties of Cu2Se thin films for optoelectronic applications

Department of Physics, College of Education for Pure Science / Ibn Al-Haitham, University of Baghdad, Baghdad, Iraq, Sa. M. Ali, H. K. Hassun, Department of Physics, College of Education for Pure Science / Ibn Al-Haitham, University of Baghdad, Baghdad, Iraq, A. A. Salih, Department of Physics, College of Education for Pure Science / Ibn Al-Haitham, University of Baghdad, Baghdad, Iraq, R. H. Athab, AI-Esraa University College, Baghdad, Iraq, B. K. H. Al-Maiyaly, Department of Physics, College of Education for Pure Science / Ibn Al-Haitham, University of Baghdad, Baghdad, Iraq, B. H. Hussein, Department of Physics, College of Education for Pure Science / Ibn Al-Haitham, University of Baghdad, Baghdad, Iraq

Chalcogenide Letters· Volume 19· Issue 10
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Abstract

Copper selenide (Cu2Se) thin films were prepared by thermal evaporation at RT with thickness 500 nm. The heat-treating for (400 &500) K for the absorber layer has been investigated. This research includes, studying the structural properties of X-ray diffraction (XRD) that show the Cu2Se thin film (Cubic) and has a polycrystalline orientation prevalent (220). Moreover, studying the effect of annealing on their surface morphology properties by using Atomic Force Microscopy AFM. Optical properties were considered using the transmittance and absorbance spectra had been recorded when wavelength range (400 - 1000) nm in order to study the absorption coefficient and energy gap. It was found that these films had allowed direct transition optical band gap which decreases with the increasing effect of annealing, while it increasing with the increase in the annealing temperature at all ratio UV-Visible transmission spectrum. Hall Effect results presented that all thin films have P-type. It is quite possible that the heterojunction (p-Cu2Se/n-Si) solar cell device is a buried. The illumination current- voltage (I-V) characteristics showed that the solar cell, with (t=500 nm and T=500 K ) has highest efficiency (η =1.4 %).
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Research context

Electronic materialsMaterials processing

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Advanced Thermoelectric Materials and Devices

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