DataVXChalcogenide LettersPaper
journal article·2023-04Open access

Modelling and simulation of PN junction CdS/CdTe for betavoltaic cell

Laboratory of Environmental and Energetic Systems , University Centre Ali Kafi Tindouf, Algeria, A. Talhi, B. Azeddine, b Laboratory for the Development of Renewable Energies and their Applications in Saharian Areas; University Tahri Mohammed Bechar, Algeria, Z. Tiouti, Laboratory of Physics and Semiconductors Devices, University Tahri Mohammed Bechar, Algeria, M. Rajczyk, Politechnika Częstochowska, University of Technology, Poland

Chalcogenide Letters· Volume 20· Issue 4
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Abstract

The method for producing power by integrating a beta source to semiconductors junction’s devices is called as betavoltaic energy conversion. [1]. In this study by using Monte Carlo (MC) method to simulate the distribution of electron- hole pairs (EHP) generated at each point in the cell under bombardment of 63Ni source for betavoltaic cell then the result of that Monte Carlo simulation will be used in the modelling and simulation of a betavoltaic cell CdS/CdTe heterojunction and their characteristics.
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Electronic materials

OpenAlex topics: Advanced Energy Technologies and Civil Engineering Innovations · Technology Assessment and Management · Advanced Materials and Semiconductor Technologies

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