Fully Transparent Pixel Circuits Driven by Random Network Carbon Nanotube Transistor Circuitry
Source abstract
Abstract
Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (I(on)) in the microampere range, high on/off current ratio (I(on)/I(off)), high field-effect mobility, and uniform threshold voltage (V(th)). In this study, we demonstrate fully transparent high-performance and high-yield thin-film transistors based on random growth of a single-walled carbon nanotube (SWNT) network that are easy to fabricate. High-performance SWNT-TFTs exhibit optical transmission of 80% in visible wavelength, I(on)/I(off) higher than 10(3), and a high yield with reproducible electrical characteristics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Carbon Nanotubes in Composites · Thin-Film Transistor Technologies · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907
Samsung Advanced Institute of Technology, San #14-1 Nongseo-do, Giheung-gu, Yongin-si, Gyeonggi-do, Korea 446-712
School of Electrical and Computer Engineering, Korea University, Anam-dong, Seongbuk-Gu, Seoul 131-701, Republic of Korea
Department of Physics, Kyonggi University, Suwon, Kyonggi-Do 443-760, Republic of Korea
References (15)
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