Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon
Source abstract
Abstract
The paper briefly describes the methodology for studying the temporal characteristics of near-IR photodiode structures under the influence of pulsed radiation from a semiconductor laser with a wavelength of 1100 and 1320 nm. The results of studying the response time of multilayer photosensitive Au-nCdS-nSi-pCdTe-Au and Au-nInP-nCdSνGaAs:O-Au structures with potential barriers are presented. It has been experimentally shown that the structures under study are not inferior in response time to known analogs based on gallium arsenide and silicon heterostructures, and can also be used in a wide optical range.
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Research context
OpenAlex topics: Photonic and Optical Devices · Silicon Nanostructures and Photoluminescence · Photorefractive and Nonlinear Optics
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References (15)
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1. [1] Sh.B. Utamuradova, Z.T. Azamatov, M.A. Yuldoshev, Optical Properties of ZnO-LiNbO3 and ZnO-LiNbO3:Fe Structures // Russian Microelectronics. 2023, Vol. 52, Suppl. 1, pp. S99- S103. DOI: 10.1134/S106373972360022X10.1134/S106373972360022X ↗
2. [2] M.A. Yuldoshev, Z.T. Azamatov, A.B. Bakhromov, M.R. Bekchanova, East Eur. J. Phys. 4, 250 (2024), https://doi.org/10.26565/2312-4334-2024-4-2510.26565/2312-4334-2024-4-25 ↗
3. [3] Sh.B. Utamuradova, Z.T. Azamatov, A.I. Popov, M.R. Bekchanova, M.A. Yuldoshev, A.B. Bakhromov, East Eur. J. Phys. 3, 278 (2024), https://doi.org/10.26565/2312-4334- 2024-3-2710.26565/2312-4334-2024-3-27 ↗
4. [4] I.А. Andreev, О.Yu. Serebrennikova, G.S. Sokolovsky, V.V. Dyudelev, N.D. Ilinsky, G.G. Konovalov, Е.V. Kunisina, Yu.P. Yakovlev, Semiconductors, 2013, Vol 47, rel. 8. pp.1109-1115; https://doi.org/10.1134/S106378261308004610.1134/S1063782613080046 ↗
5. [5] A.I. Yakimov, A.V. Dvurechenskii, A.I. Nikiforov, S.V. Chaikovskii, S.A. Teys, Semiconductors, 2003, Vol 37, rel. 11. pp.1383-1388; https://doi.org/10.1134/1.162622210.1134/1.1626222 ↗
6. [6] Dennis Maes Sam Lemey, Gunther Roelkens, Mohammed Zaknoune, Vanessa Avramovic, Etienne Okada, Pascal Szriftgiser, Emilien Peytavit, Guillaume Ducournau, Bart Kuyken, APL Photonics 8, 016104 (2023); https://doi.org/10.1063/5.011924410.1063/5.0119244 ↗
7. [7] O. Renner, E. Krousky, L. Pina, Czechoslovak Journal of Physics, 1992. Vol. 42. pp. 1-9; https://doi.org/10.1007/BF0160515510.1007/BF01605155 ↗
8. [8] A.V. Golubev, A.A. Sorokin, E.G. Pivinsky, S.V. Bobashev, V.V. Akulinichev, Journal of Technical Physics, 1999. Issue 5, pp. 83-88; https://doi.org/10.1134/1.125953510.1134/1.1259535 ↗
9. [9] D.S. Andreev, V.S. Varganova, P.E. Khakuashev, I.V. Chinareva, A.I. Dirochka, Applied Physics, 2015, No.6. pp.70-73.
10. [10] V.P. Germogenov, Materials, structures and devices of semiconductor optoelectronics: textbook. manual - Tomsk: Tomsk State University. 2015, 272 p.
11. [11] A.V. Karimov, D.M. Yodgorova, F.A. Giyasova, Abdulkhaev O.A., Sh.M. Kuliev, Zh.Kh. Shertoev, Semiconductor Physics and Microelectronics, 2019, volume 1, issue 2, pp. 27-35.
12. [12] F.A. Giyasova, Physics of Semiconductors and Microelectronics. 2022, volume 4, issue 1, pp. 42-50.
13. [13] A.V. Karimov, O.A. Abdulkhaev, D.R. Juraev, A.A. Turaev, Proceedings of the III International Conference "Optical and Photoelectric Phenomena", Fergana-2014, pp. 159-160.
14. [14] I.A. Andreev, O.Yu. Serebrennikova, N.D. Ilyinskaya, A.A. Pivovarova, G.G. Konovalov, E.V. Kunitsyna, V.V. Sherstnev, Yu.P. Yakovlev, Physics and Technology of Semiconductors, 2015, Vol. 49, Issue 12. pp. 1720-1726; https://doi.org/10.1134/S106378261512002710.1134/S1063782615120027 ↗
15. [15] Patent of the Republic of Uzbekistan No._IAP 04002 dated July 29, 2009, High-frequency high-speed photodetector, Yodgorova D.M., Karimov A.V., Saidova R.A., Giyasova F.A., Mirdzhalilova M.A.,Official bulletin. No 8.