Improvement and optimization of Cu2ZnSn(S1-xSex)4 structure for optoelectronic applications
Source abstract
Abstract
The use of semiconductors based on abundant and less expensive materials in photovoltaic industry has grown since electricity consumption has increased, alloys such as Cu2ZnSn(S1-xSex)4 have recently attracted attention, due to its structural, optical and electronic properties which make it a very promising candidate as an absorber layer in photovoltaic applications. The lattice mismatch of Cu2ZnSn(S1-xSex)4 with Cu2NiGeS4 as substrate for solar cell architecture reveals that low Se content (0.1≤x≤0.4) is favorable, and thus, by reducing Se content from 40 to 10% induces a decrease in optical parameters such as refractive index from 5.475 to 3.834 for near-infrared wavelengths, and both extinction and absorption coefficients are from 0.478 to 0.211 and from 7.956×104 to 6.912×104 cm-1 , respectively, for almost along the visible spectrum. Additionally, the bandgap energy of Cu2ZnSn(S1-xSex)4 in kesterite structure increases from 1.267 to 1.442 eV at room temperature, while the compressive strain of the epitaxial layer reduces from 3.93 to 2.39% and from 4.62 to 3.17% on the growth plane and following the direction of growth, respectively.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · ZnO doping and properties · Quantum Dots Synthesis And Properties
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References (28)
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