Tunable Ionic Transport for a Triangular Nanochannel in a Polymeric Nanofluidic System
Source abstract
Abstract
Recently, tremendous engineering applications utilizing new physics of nanoscale electrokinetics have been reported and their basic fundamentals are actively researched. In this work, we first report a simple and economic but reliable nanochannel fabrication technique, leading to a heterogeneously charged triangular nanochannel. The nanochannel utilized the elasticity of PDMS when it bonded with a micrometer-scale structure on a substrate. Second, we successfully demonstrated novel ionic transportations by tweaking the micrometer structures: (1) the transition of nonlinear ionic conductance depending on the nanochannel properties and (2) the ionic field-effect transistor. Nanochannel conductance has two distinguishable nonlinear regimes called the "surface-charge-governed" and the "geometry-governed" regime and its only individual overlooks were frequently reported. However, the transition between two regimes by adjusting nanochannel properties has not been reported due to the difficulty of functional nanochannel fabrication. In addition, a gate voltage was comfortably applied to the triangular nanochannel so that the field-effect ion transportation was reliably achieved. Therefore, presenting triangular nanochannels have critical advantages over its heterogeneous and tunable surface properties and thus, could be an effective means as an active fundamental to control and manipulate the ion-electromigration through a nanofluidic system.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanopore and Nanochannel Transport Studies · Fuel Cells and Related Materials · Membrane Separation Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, Korea
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