A Facile Route To Recover Intrinsic Graphene over Large Scale
Source abstract
Abstract
The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H(2)O/O(2) redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H(2)O/O(2) redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H(2)O/O(2) redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Graphene and Nanomaterials Applications · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Energy IT, Gachon University, Seongnam, Gyeonggi-do, 461701, Republic of Korea
Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas, Austin, Texas, United States
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