journal article·2010-06-22

Electrical Transport and Field-Effect Transistors Using Inkjet-Printed SWCNT Films Having Different Functional Side Groups

Eduardo Gracia-Espino, Giovanni Sala, Flavio Pino, Niina Halonen, Juho Luomahaara, Jani Mäklin, Géza Tóth, Krisztián Kordás, Heli Jantunen, Mauricio Terrones, Panu Helistö, Heikki Seppä, Pulickel M. Ajayan, Robert Vajtai

ACS Nano· Volume 4· Issue 6
Publisher page

Abstract

The electrical properties of random networks of single-wall carbon nanotubes (SWNTs) obtained by inkjet printing are studied. Water-based stable inks of functionalized SWNTs (carboxylic acid, amide, poly(ethylene glycol), and polyaminobenzene sulfonic acid) were prepared and applied to inkjet deposit microscopic patterns of nanotube films on lithographically defined silicon chips with a back-side gate arrangement. Source-drain transfer characteristics and gate-effect measurements confirm the important role of the chemical functional groups in the electrical behavior of carbon nanotube networks. Considerable nonlinear transport in conjunction with a high channel current on/off ratio of approximately 70 was observed with poly(ethylene glycol)-functionalized nanotubes. The positive temperature coefficient of channel resistance shows the nonmetallic behavior of the inkjet-printed films. Other inkjet-printed field-effect transistors using carboxyl-functionalized nanotubes as source, drain, and gate electrodes, poly(ethylene glycol)-functionalized nanotubes as the channel, and poly(ethylene glycol) as the gate dielectric were also tested and characterized.
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Research context

OpenAlex topics: Nanomaterials and Printing Technologies · Nanofabrication and Lithography Techniques · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Advanced Materials Department, Instituto Potosino de Investigación Científica y Tecnológica, camino a la presa San José 2055, Col. Lomas 4. Sección, 78216 San Luis Potosí, México

Microelectronics and Materials Physics Laboratories, Department of Electrical and Information Engineering, University of Oulu, P.O. Box 4500, FIN-90014 University of Oulu, Finland

Quantronics/Microtechnologies and Sensors, VTT Technical Research Centre of Finland, Espoo, P.O. Box 1000, TT3, 02044 VTT, Finland

Departamento de Ciencia e Ingeniería de Materiales e Ingeniería Química, Escuela Politécnica Superior, Universidad Carlos III de Madrid, Avenida Universidad 30, 28911 Leganés, Madrid, Spain

Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas 77005

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