Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires
Source abstract
Abstract
We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Solid State Physics, Lund University, Box 118, S-22100, Lund, Sweden
References (32)
Show source-provided references
1. Quinn J. J. · Surf. Sci. · 1978 · 73 · 19010.1016/0039-6028(78)90489-2 ↗
2. Baba T. · Jpn. J. Appl. Phys. · 1992 · 31 · L45510.1143/JJAP.31.L455 ↗
3. Kim, D.; Lee, Y.; Cai, J.; Lauer, I.; Chang, L.; Koester, S. J.; Sylvester., D.; Blaauw, D.Low Power Circuit Design Based on Heterojunction Tunneling Transistors in ISLPED.Proceedings of the 14thACM/IEEE International Symposium on Low Power Electronics and Design;ACM:New York, NY, USA, 2009; pp219–224.10.1145/1594233.1594287 ↗
4. Choi W. Y. · IEEE Electron Device Lett. · 2007 · 28 · 74310.1109/LED.2007.901273 ↗
5. Leonelli D. · Jpn. J. Appl. Phys. · 2010 · 49 · 04DC1010.1143/JJAP.49.04DC10 ↗
6. Kazazis D. · Appl. Phys. Lett. · 2009 · 94 · 26350810.1063/1.3168646 ↗
7. Mookerjea S. · IEEE Electron Device Lett. · 2010 · 31 · 56410.1109/LED.2010.2045631 ↗
8. Appenzeller J. · Phys. Rev. Lett. · 2004 · 93 · 19680510.1103/PhysRevLett.93.196805 ↗
9. Björk M. T. · Appl. Phys. Lett. · 2008 · 92 · 19350410.1063/1.2928227 ↗
10. Vallett A. L. · Nano Lett. · 2010 · 10 · 481310.1021/nl102239q ↗
11. Gandhi R. · IEEE Electron Device Lett. · 2011 · 32 · 43710.1109/LED.2011.2106757 ↗
12. Smith J. T. · IEEE Trans. Electron Devices · 2011 · 58 · 182210.1109/TED.2011.2135355 ↗
13. Pankove J. I. · 1975
14. Knoch J. · IEEE Electron Device Lett. · 2010 · 31 · 30510.1109/LED.2010.2041180 ↗
15. Björk M. T. · Appl. Phys. Lett. · 2010 · 97 · 16350110.1063/1.3499365 ↗
16. Verhulst A. S. · IEEE Electron Device Lett. · 2008 · 29 · 139810.1109/LED.2008.2007599 ↗
17. Ionescu A. M. · Nature · 2011 · 479 · 32910.1038/nature10679 ↗
18. Borg B. M. · Nano Lett. · 2010 · 10 · 408010.1021/nl102145h ↗
19. Ganjipour B. · Nano Lett. · 2011 · 11 · 422210.1021/nl202180b ↗
20. Thelander C. · IEEE Electron Device Lett. · 2008 · 29 · 20610.1109/LED.2007.915374 ↗
21. Wallentin J. · Nano Lett. · 2010 · 10 · 97410.1021/nl903941b ↗
22. Tan I. H. · J. Appl. Phys. · 1990 · 68 · 407110.1063/1.346245 ↗
23. Pistol M. E. · Phys. Rev. B · 2009 · 80 · 03531610.1103/PhysRevB.80.035316 ↗
24. Sze S. M. · 1981
25. Storm K. · Nano Lett. · 2011 · 11 · 112710.1021/nl104032s ↗
26. Abul-khayer M. · J. Appl. Phys. · 2011 · 110 · 07450810.1063/1.3642954 ↗
27. Tuck B. · J. Phys. Chem. Solids · 1968 · 29 · 61510.1016/0022-3697(68)90029-2 ↗
28. Park S. · J. Korean Phys. Soc. · 1989 · 22 · 62
29. Magnusson M. H. · Nanostruct. Mater. · 1999 · 12 · 4510.1016/S0965-9773(99)00063-X ↗
30. Minot E. D. · Nano Lett. · 2007 · 7 · 36710.1021/nl062483w ↗
31. Gutsche C. · J. Appl. Phys. · 2009 · 105 · 02430510.1063/1.3065536 ↗
32. Borgström M. T. · Nano Res. · 2010 · 3 · 26410.1007/s12274-010-1029-x ↗