journal article·2025-07-22

Edge-Dominated Epitaxy of Topological Insulator Bi2Se3 with Ultrabroadband Response

Tiange Zhao, Shijie Duan, Wenzhen Dou, Tengfei Xu, Xiaoyun Wang, Yuzhuo Bai, Lin Wang, Liang Ma, Jun Wang, Zhen Wang, Jianbin Xu, Jinlan Wang, Xinran Wang, Weida Hu

ACS Nano· Volume 19· Issue 28
Publisher page

Abstract

Topological insulators, as a typical quantum state with robust spin–orbit coupling and topologically protected surface states, hold transformative potential for next-generation information devices. However, current fabrication approaches face critical limitations in thermodynamic uniformity and kinetic precision, hindering the scalable synthesis of high-quality crystals. Herein, we propose a flow-confined epitaxy strategy to synthesize large-scale Bi 2 Se 3 topological insulators. Precisely regulating the chemical potential and reaction kinetics ensures atomic-level thermodynamic homogeneity and suppressed parasitic nucleation. The edge-dominated lateral diffusion mechanism enables the synthesis of millimeter-scale high-quality Bi 2 Se 3 single crystals and 2-in. wafer-scale highly oriented Bi 2 Se 3 crystals. Furthermore, through the construction of a 16 × 16 array, we demonstrate the ultrabroadband (520 nm–0.1 THz) and uniform response with excellent sensitivity of Bi 2 Se 3 devices. This work presents a universal epitaxial paradigm for scalable topological insulator synthesis, which supports future integration into quantum photonic circuits and high-performance optoelectronic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Topological Materials and Phenomena · 2D Materials and Applications · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Infrared Physics

Shanghai Institute of Technical Physics, Chinese Academy of Sciences

State Key Laboratory of Electronic Thin Films and Integrated Devices

University of Electronic Science and Technology of China

Suzhou Laboratory

School of Information Science and Technology, and School of Microelectronics and Integrated Circuits (Jiangsu Key Laboratory of Semi. Dev. & IC Design, Package and Test)

Nantong University

Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics

Southeast University

Shenzhen Research Institute

The Chinese University of Hong Kong

National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures

Nanjing University

Funding

National Key Research and Development Program of China · Basic and Applied Basic Research Foundation of Guangdong Province · China Postdoctoral Science Foundation · Natural Science Foundation of Jiangsu Province · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China

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