Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits
Source abstract
Abstract
Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile reconfigurable four-mode field-effect transistors (NVR4M-FETs) based on two-dimensional (2D) MoTe 2 and CuInP 2 S 6 (CIPS), offering both polarity switching and threshold voltage modulation. The device exploits the ferroelectric polarization of CIPS at the source/drain regions to achieve dynamic control over the transistor polarity, enabling transitions between n-type and p-type states through polarization-induced local electrostatic doping. Additionally, multilayer graphene floating gates are incorporated to modulate the threshold voltage, yielding four distinct nonvolatile operating modes: n-type logic, p-type logic, always-on memory, and always-off memory. Leveraging the four-mode property, the NVR4M-FET can function as a one-transistor-per-bit ternary content-addressable memory (TCAM). In addition, we demonstrate the construction of transformable logic gates with 14 distinct logic functions using two NVR4M-FETs and a reconfigurable half a dder/subtractor using three NVR4M-FETs integrated with load resistors. Furthermore, we show that a 2-input look-up table can be achieved with eight NVR4M-FETs compared to 12 transistors using reconfigurable transistors, highlighting the potential of NVR4M-FETs for high-density logic circuits. These results underscore the potential of NVR4M-FETs as essential building blocks for energy-efficient, in-memory computing, and secure hardware applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Quantum-Dot Cellular Automata · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering
University of Illinois at Urbana−Champaign
Department of Materials Science and Engineering
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Funding
Division of Engineering Education and Centers · University of Illinois at Urbana-Champaign
References (70)
Show source-provided references
1. 10.1038/nature1453910.1038/nature14539 ↗
2. 10.1109/JPROC.2017.276174010.1109/JPROC.2017.2761740 ↗
3. 10.1126/science.aaa841510.1126/science.aaa8415 ↗
4. 10.1038/s41586-020-2861-010.1038/s41586-020-2861-0 ↗
5. 10.1038/s41565-020-0655-z10.1038/s41565-020-0655-z ↗
6. 10.1002/adma.20200708110.1002/adma.202007081 ↗
7. 10.1038/s41565-020-0724-310.1038/s41565-020-0724-3 ↗
8. 10.1038/s41928-018-0054-810.1038/s41928-018-0054-8 ↗
9. 10.1109/MSSC.2019.292288910.1109/MSSC.2019.2922889 ↗
10. 10.1002/aisy.20200004010.1002/aisy.202000040 ↗
11. 10.1038/s41928-020-00511-710.1038/s41928-020-00511-7 ↗
12. 10.1145/281681810.1145/2816818 ↗
13. 10.1088/1742-6596/471/1/01202610.1088/1742-6596/471/1/012026 ↗
14. 10.1038/s41928-023-01034-710.1038/s41928-023-01034-7 ↗
15. 10.1021/acs.nanolett.1c0355710.1021/acs.nanolett.1c03557 ↗
16. 10.1021/nl203094h10.1021/nl203094h ↗
17. 10.1063/5.017727510.1063/5.0177275 ↗
18. 10.1557/s43580-023-00509-110.1557/s43580-023-00509-1 ↗
19. 10.1088/1361-6641/aa558110.1088/1361-6641/aa5581 ↗
20. Raitza, M.; Kumar, A.; Völp, M.; Walter, D.; Trommer, J.; Mikolajick, T.; Weber, W. M. In Exploiting transistor-level reconfiguration to optimize combinational circuits, Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017, 27–31 March; pp 338–343.10.23919/DATE.2017.7927013 ↗
21. 10.1038/s41928-022-00858-z10.1038/s41928-022-00858-z ↗
22. 10.1021/acsnano.3c0390010.1021/acsnano.3c03900 ↗
23. 10.1038/s41467-023-39394-510.1038/s41467-023-39394-5 ↗
24. Khanna V. K. · 2016 · 7310.1007/978-81-322-3625-2_5 ↗
25. 10.1109/TED.2012.219155610.1109/TED.2012.2191556 ↗
26. 10.1002/adma.20160612810.1002/adma.201606128 ↗
27. 10.1039/D0NR07548E10.1039/D0NR07548E ↗
28. 10.1038/natrevmats.2016.5210.1038/natrevmats.2016.52 ↗
29. 10.1002/sstr.20220012510.1002/sstr.202200125 ↗
30. 10.1002/adfm.20190210510.1002/adfm.201902105 ↗
31. 10.1002/smtd.20200083710.1002/smtd.202000837 ↗
32. 10.1103/PhysRevLett.118.23680110.1103/PhysRevLett.118.236801 ↗
33. 10.1021/acs.nanolett.7b0547310.1021/acs.nanolett.7b05473 ↗
34. 10.1038/s41928-019-0350-y10.1038/s41928-019-0350-y ↗
35. 10.1021/acsnano.3c0795210.1021/acsnano.3c07952 ↗
36. 10.1021/acsnano.4c1108110.1021/acsnano.4c11081 ↗
37. 10.1038/s41467-019-11328-010.1038/s41467-019-11328-0 ↗
38. 10.1016/j.isci.2022.10516010.1016/j.isci.2022.105160 ↗
39. 10.1038/s44287-024-00045-610.1038/s44287-024-00045-6 ↗
40. 10.1021/acsnano.1c0913610.1021/acsnano.1c09136 ↗
41. 10.1021/acsnano.8b0181010.1021/acsnano.8b01810 ↗
42. 10.1021/acsami.3c1058210.1021/acsami.3c10582 ↗
43. 10.1021/nn500760710.1021/nn5007607 ↗
44. 10.1103/PhysRevB.91.20541510.1103/PhysRevB.91.205415 ↗
45. 10.1002/admt.20190022010.1002/admt.201900220 ↗
46. 10.3390/nano1103062210.3390/nano11030622 ↗
47. 10.1039/C5NR01514F10.1039/C5NR01514F ↗
48. 10.1038/nmat324510.1038/nmat3245 ↗
49. 10.1103/PhysRevB.84.11340610.1103/PhysRevB.84.113406 ↗
50. 10.1186/1556-276x-8-33510.1186/1556-276x-8-335 ↗
51. 10.1038/s41467-021-21320-210.1038/s41467-021-21320-2 ↗
52. 10.1088/1361-6463/ad865f10.1088/1361-6463/ad865f ↗
53. 10.1021/acsami.0c1379910.1021/acsami.0c13799 ↗
54. 10.1038/s41565-021-00921-410.1038/s41565-021-00921-4 ↗
55. 10.1038/s41565-021-00904-510.1038/s41565-021-00904-5 ↗
56. 10.1002/adma.20231165210.1002/adma.202311652 ↗
57. 10.1002/smll.20190452910.1002/smll.201904529 ↗
58. 10.1063/1.512336610.1063/1.5123366 ↗
59. 10.1038/ncomms1235710.1038/ncomms12357 ↗
60. 10.1002/j.1538-7305.1967.tb01738.x10.1002/j.1538-7305.1967.tb01738.x ↗
61. 10.1109/TCSII.2001.91318010.1109/TCSII.2001.913180 ↗
62. 10.1016/j.mee.2023.11210610.1016/j.mee.2023.112106 ↗
63. 10.1021/acs.nanolett.9b0249710.1021/acs.nanolett.9b02497 ↗
64. 10.1039/C6NR02231F10.1039/C6NR02231F ↗
65. 10.1038/nphoton.2015.27710.1038/nphoton.2015.277 ↗
66. Haratipour, N.; Koester, S. J. In Multi-layer MoTe2 p-channel MOSFETs with high drive current, 72nd Device Research Conference, 22–25 June 2014; 2014; pp 171–172.10.1109/DRC.2014.6872352 ↗
67. 10.1016/j.diamond.2019.10757610.1016/j.diamond.2019.107576 ↗
68. 10.1063/1.496583710.1063/1.4965837 ↗
69. 10.1109/JSSC.2005.86412810.1109/JSSC.2005.864128 ↗
70. 10.1109/JPROC.2013.225231710.1109/JPROC.2013.2252317 ↗