journal article·2024-07-09Open access

Nonvolatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures

Simrjit Singh, Kwan-Ho Kim, Kiyoung Jo, Pariasadat Musavigharavi, Bumho Kim, Jeffrey Zheng, Nicholas Trainor, Chen Chen, Joan M. Redwing, Eric A. Stach, Roy H. Olsson, Deep Jariwala

ACS Nano· Volume 18· Issue 27

Abstract

Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that the integration of 2D materials with ferroelectrics is a promising strategy; however, an experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe 2 channel and an Al 0.68 Sc 0.32 N (AlScN) ferroelectric dielectric and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measure a large array of transistors and obtain a maximum valley polarization of ∼27% at 80 K with stable retention up to 5400 s. The enhancement in the valley polarization is ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz., the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization for practical valleytronic device applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

Department of Applied Physics and Science Education, Eindhoven University of Technology, Eindhoven 5600 MB, The Netherlands

Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States

Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16801, United States

2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16801, United States

Funding

National Science Foundation Graduate Research Fellowship Program · Air Force Office of Scientific Research · H2020 Marie Sklodowska-Curie Actions · United States - India Educational Foundation · Office of Naval Research · Division of Electrical, Communications and Cyber Systems · Vagelos Institute for Energy Science and Technology, University of Pennsylvania · Asian Office of Aerospace Research and Development

References (64)

Show source-provided references
1. 10.1002/smll.20180148310.1002/smll.201801483 ↗
2. 10.1038/natrevmats.2016.5510.1038/natrevmats.2016.55 ↗
3. 10.1088/1361-6633/abdb9810.1088/1361-6633/abdb98 ↗
4. 10.1038/nnano.2012.9510.1038/nnano.2012.95 ↗
5. 10.1038/ncomms863610.1038/ncomms8636 ↗
6. 10.1364/OE.26.02867210.1364/OE.26.028672 ↗
7. 10.1021/acs.nanolett.6b0299810.1021/acs.nanolett.6b02998 ↗
8. 10.1038/s41467-019-13501-x10.1038/s41467-019-13501-x ↗
9. 10.1038/s41467-021-24764-810.1038/s41467-021-24764-8 ↗
10. 10.1038/nmat499610.1038/nmat4996 ↗
11. 10.1021/acs.nanolett.9b0483610.1021/acs.nanolett.9b04836 ↗
12. 10.1063/1.502476610.1063/1.5024766 ↗
13. 10.1038/s41467-019-11966-410.1038/s41467-019-11966-4 ↗
14. 10.1103/PhysRevB.104.L12140810.1103/PhysRevB.104.L121408 ↗
15. 10.1021/acs.nanolett.0c0467010.1021/acs.nanolett.0c04670 ↗
16. 10.1038/nphys320310.1038/nphys3203 ↗
17. 10.1103/PhysRevLett.114.03740110.1103/PhysRevLett.114.037401 ↗
18. 10.1038/nphys320110.1038/nphys3201 ↗
19. 10.1364/OME.9.00147910.1364/OME.9.001479 ↗
20. 10.1002/smll.20180550310.1002/smll.201805503 ↗
21. 10.1002/adfm.20190026010.1002/adfm.201900260 ↗
22. 10.1063/5.003761710.1063/5.0037617 ↗
23. 10.1103/PhysRevApplied.11.01401110.1103/PhysRevApplied.11.014011 ↗
24. 10.1039/D0TC01680B10.1039/D0TC01680B ↗
25. 10.1021/acs.jpcc.0c1136210.1021/acs.jpcc.0c11362 ↗
26. 10.1063/5.003551510.1063/5.0035515 ↗
27. Institute of Electrical and Electronics Engineers. IEEE 11th International Memory Workshop: IMW 2019, 12–15 May 2019, Monterey, California, USA.
28. Mikolajick, T.; Schroeder, U.; Slesazeck, S. Hafnium Oxide Based Ferroelectric Devices for Memories and Beyond. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018; Institute of Electrical and Electronics Engineers Inc., 2018; pp 1–2;10.1109/VLSI-TSA.2018.8403848.10.1109/VLSI-TSA.2018.8403848 ↗
29. 10.1063/5.001494510.1063/5.0014945 ↗
30. 10.1088/1674-4926/40/6/06100210.1088/1674-4926/40/6/061002 ↗
31. 10.1080/0015019021428510.1080/00150190214285 ↗
32. 10.1021/acsnano.3c0927910.1021/acsnano.3c09279 ↗
33. 10.1103/PhysRevLett.124.19680210.1103/PhysRevLett.124.196802 ↗
34. 10.1063/1.511282310.1063/1.5112823 ↗
35. 10.1021/acsomega.6b0030210.1021/acsomega.6b00302 ↗
36. 10.1088/1361-6528/aa87d010.1088/1361-6528/aa87d0 ↗
37. 10.1038/s41567-018-0123-y10.1038/s41567-018-0123-y ↗
38. 10.1103/PhysRevB.90.07541310.1103/PhysRevB.90.075413 ↗
39. 10.1063/1.489547110.1063/1.4895471 ↗
40. 10.1038/nnano.2013.15110.1038/nnano.2013.151 ↗
41. 10.1103/PhysRevB.103.07543010.1103/PhysRevB.103.075430 ↗
42. 10.1080/0015019700823766410.1080/00150197008237664 ↗
43. 10.1063/1.152283310.1063/1.1522833 ↗
44. 10.1103/PhysRevLett.123.02740110.1103/PhysRevLett.123.027401 ↗
45. 10.1103/PhysRevB.105.08530210.1103/PhysRevB.105.085302 ↗
46. 10.1103/PhysRevB.96.08530210.1103/PhysRevB.96.085302 ↗
47. 10.1038/nphys320110.1038/nphys3201 ↗
48. 10.1021/acs.nanolett.6b0417110.1021/acs.nanolett.6b04171 ↗
49. 10.1103/PhysRevB.93.04140710.1103/PhysRevB.93.041407 ↗
50. 10.1038/s41467-022-31672-y10.1038/s41467-022-31672-y ↗
51. 10.1021/acs.nanolett.9b0513810.1021/acs.nanolett.9b05138 ↗
52. 10.1038/nphys341910.1038/nphys3419 ↗
53. 10.1021/acs.nanolett.5b0377110.1021/acs.nanolett.5b03771 ↗
54. 10.1088/2053-1583/aa98ae10.1088/2053-1583/aa98ae ↗
55. 10.1021/acs.nanolett.9b0213210.1021/acs.nanolett.9b02132 ↗
56. 10.1103/PhysRevB.103.07543010.1103/PhysRevB.103.075430 ↗
57. 10.1021/acs.nanolett.6b0172710.1021/acs.nanolett.6b01727 ↗
58. 10.1038/nnano.2012.9610.1038/nnano.2012.96 ↗
59. 10.1103/PhysRevB.87.24542110.1103/PhysRevB.87.245421 ↗
60. 10.48550/arXiv.1404.767410.48550/arXiv.1404.7674 ↗
61. 10.48550/arXiv.1502.0681710.48550/arXiv.1502.06817 ↗
62. 10.1126/science.aba141610.1126/science.aba1416 ↗
63. 10.1016/j.jcrysgro.2019.12524710.1016/j.jcrysgro.2019.125247 ↗
64. 10.1021/acs.nanolett.7b0452110.1021/acs.nanolett.7b04521 ↗