Highly Responsive Dual-Function Deep-Ultraviolet Neuromorphic Phototransistors Based on Silicon Carbide Nanoparticle/2D MoS2 Heterostructures
Source abstract
Abstract
Two-dimensional (2D) semiconductors have been of great interest for phototransistors and neuromorphic devices in recent years because of their unique optical and electronic properties. However, the detectable spectral range and light absorption efficiency are limited for 2D-semiconductor-based phototransistors. Herein, we report a high-performance deep-ultraviolet (DUV) sensitive phototransistor by integrating molybdenum disulfide (MoS 2 ) with silicon carbide nanoparticles (SiC NPs) to form a van der Waals heterostructure (vdWH), which shows ultrahigh responsivity and detectivity, especially in the DUV spectral range. The SiC NPs/few-layer MoS 2 vdWH phototransistor shows a 20-fold enhancement in responsivity (from 9.4 × 10 2 to 1.9 × 10 4 A/W) and 11-fold enhancement in detectivity (from 7.9 × 10 12 to 8.4 × 10 13 cm × Hz 1/2 /W) at 254 nm wavelength, compared to the phototransistor based on few-layer MoS 2 alone. Moreover, the SiC NPs/few-layer MoS 2 vdWH phototransistor also shows higher excitation postsynaptic current (EPSC) and longer retention time of postsynaptic current (PSC) compared to the phototransistor based on few-layer MoS 2 alone. This enables vdWH devices to successfully mimic various biological synaptic functions, including paired-pulse facilitation (PPF), spike-duration-dependent plasticity, spike-number-dependent plasticity, spike-frequency-dependent plasticity, the transition from short-term plasticity (STP) to long-term plasticity (LTP), and long-term depression (LTD) capabilities. The simulation of a deep neural network (DNN) shows that the image inference accuracy based on these SiC NPs/few-layer MoS 2 vdWH neuromorphic phototransistors reaches up to 98.99% even after considering the photoresponsivity variations. The high-performance dual-function neuromorphic optoelectronics based on SiC NPs/MoS 2 vdWH hold great promise for ultrasensitive DUV photodetection, neuromorphic DUV visual sensing, and in-sensor computing applications in a single device.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Michigan − Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University
Hon Hai Research Institute
Foxconn Technology Group
Department of Electrical Engineering
National Central University
State Key Laboratory of Radio Frequency Heterogeneous Integration
Shanghai Jiao Tong University
Funding
Natural Science Foundation of Chongqing Municipality · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China · Shenzhen University
References (58)
Show source-provided references
1. 10.1038/s41467-023-36117-810.1038/s41467-023-36117-8 ↗
2. 10.1002/adfm.20211167310.1002/adfm.202111673 ↗
3. 10.1002/adfm.20231538310.1002/adfm.202315383 ↗
4. 10.1038/d41586-020-00592-610.1038/d41586-020-00592-6 ↗
5. 10.1038/s41928-023-01055-210.1038/s41928-023-01055-2 ↗
6. 10.1038/s41565-023-01446-810.1038/s41565-023-01446-8 ↗
7. 10.1038/s41586-020-2038-x10.1038/s41586-020-2038-x ↗
8. 10.1002/adma.20230809010.1002/adma.202308090 ↗
9. 10.1021/acsnano.9b0034010.1021/acsnano.9b00340 ↗
10. 10.1038/s41928-022-00847-210.1038/s41928-022-00847-2 ↗
11. 10.1002/smll.20220666410.1002/smll.202206664 ↗
12. 10.1021/acsomega.4c0289710.1021/acsomega.4c02897 ↗
13. 10.1021/acsami.2c2080110.1021/acsami.2c20801 ↗
14. 10.1002/adom.20230246610.1002/adom.202302466 ↗
15. 10.1016/j.mtphys.2023.10103410.1016/j.mtphys.2023.101034 ↗
16. 10.1063/5.017881510.1063/5.0178815 ↗
17. 10.1021/acsnano.2c0606210.1021/acsnano.2c06062 ↗
18. 10.1088/1361-6463/ac2d6010.1088/1361-6463/ac2d60 ↗
19. 10.1002/adfm.20231236510.1002/adfm.202312365 ↗
20. 10.1021/acsphotonics.4c0112210.1021/acsphotonics.4c01122 ↗
21. 10.1002/adma.20120190910.1002/adma.201201909 ↗
22. 10.1021/nl501728310.1021/nl5017283 ↗
23. 10.1038/nnano.2013.10010.1038/nnano.2013.100 ↗
24. 10.1002/admt.20220112510.1002/admt.202201125 ↗
25. 10.1002/advs.20230012010.1002/advs.202300120 ↗
26. 10.1002/lpor.20220048610.1002/lpor.202200486 ↗
27. 10.1002/adma.20241920810.1002/adma.202419208 ↗
28. 10.1039/C7RA01222E10.1039/C7RA01222E ↗
29. 10.3390/catal1302023610.3390/catal13020236 ↗
30. 10.1021/acsami.3c0254010.1021/acsami.3c02540 ↗
31. 10.1021/acsphotonics.6b0029910.1021/acsphotonics.6b00299 ↗
32. 10.1063/1.514457910.1063/1.5144579 ↗
33. 10.1002/adfm.20180201510.1002/adfm.201802015 ↗
34. 10.1002/smll.20200630710.1002/smll.202006307 ↗
35. 10.1002/adfm.20170101110.1002/adfm.201701011 ↗
36. 10.1039/D0RA03183F10.1039/D0RA03183F ↗
37. 10.1021/acsami.9b0791010.1021/acsami.9b07910 ↗
38. 10.1002/advs.20170032310.1002/advs.201700323 ↗
39. 10.1002/advs.20210557710.1002/advs.202105577 ↗
40. 10.1021/acsami.4c1235710.1021/acsami.4c12357 ↗
41. 10.1021/acsnano.3c0226310.1021/acsnano.3c02263 ↗
42. 10.1088/2053-1583/aa805e10.1088/2053-1583/aa805e ↗
43. 10.1038/s41467-017-00043-310.1038/s41467-017-00043-3 ↗
44. 10.1016/j.neuroscience.2024.09.04410.1016/j.neuroscience.2024.09.044 ↗
45. 10.1109/5.72679110.1109/5.726791 ↗
46. 10.1109/TCSI.2021.311048710.1109/TCSI.2021.3110487 ↗
47. 10.1109/TED.2019.290624910.1109/TED.2019.2906249 ↗
48. 10.1002/smll.20240850810.1002/smll.202408508 ↗
49. 10.1038/nmat398410.1038/nmat3984 ↗
50. 10.1021/nl301485q10.1021/nl301485q ↗
51. 10.1063/5.010060110.1063/5.0100601 ↗
52. 10.1002/adma.20150188810.1002/adma.201501888 ↗
53. 10.1021/acs.jpcc.2c0450910.1021/acs.jpcc.2c04509 ↗
54. 10.1021/acs.jctc.4c0078410.1021/acs.jctc.4c00784 ↗
55. Sikka S. K. · Curr. Sci. · 1997 · 195
56. Baur W. H. · Am. Miner. · 1971 · 56 · 1573
57. 10.1002/adfm.20170614910.1002/adfm.201706149 ↗
58. 10.1038/s41586-021-03472-910.1038/s41586-021-03472-9 ↗