Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors
Abstract
Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Graphene research and applications · Diamond and Carbon-based Materials Research
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Affiliations
Electrical and Computer Engineering, New York University, Brooklyn, New York 11201, United States
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Daejeon, Yuseong-gu 34141, Korea
Microelectronics and Semiconductor Institute, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia
Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Funding
Ministry of Education, Culture, Sports, Science and Technology · National Research Foundation of Korea · Japan Society for the Promotion of Science · Division of Civil, Mechanical and Manufacturing Innovation · Korea Advanced Institute of Science and Technology