DataVXACS NanoPaper
journal article·2023-10-10Open access

An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors

Pavan Pujar, Haewon Cho, Young-Hoon Kim, Nicolò Zagni, Jeonghyeon Oh, Eunha Lee, Srinivas Gandla, Pavan Nukala, Young-Min Kim, Muhammad Ashraful Alam, Sunkook Kim

ACS Nano· Volume 17· Issue 19
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Source abstract

Abstract

The crucial role of nanocrystalline morphology in stabilizing the ferroelectric orthorhombic (o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by intentionally retaining carbonaceous impurities to inhibit grain growth. However, in the present study, large-grained (>100 nm) La-doped HfO 2 (HLO) films are grown directly on silicon by adopting engineered water-diluted precursors with a minimum carbonaceous load and excellent shelf life. The o-phase stabilization is accomplished through a well-distributed La dopant, which generates uniformly populated oxygen vacancies, eliminating the need for oxygen-scavenging electrodes. These oxygen-deficient HLOs show a maximum remnant polarization of 37.6 μC/cm 2 (2 P r ) without wake-up and withstand large fields (>6.2 MV/cm). Furthermore, CSD-HLO in series with Al 2 O 3 improves switching of MOSFETs (with an amorphous oxide channel) based on the negative capacitance effect. Thus, uniformly distributed oxygen vacancies serve as a standalone factor in stabilizing the o-phase, enabling efficient wake-up-free ferroelectricity without the need for nanostructuring, capping stresses, or oxygen-reactive electrodes.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materialsMaterials processing

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Ceramic Engineering, Indian Institute of Technology (IIT-BHU), Varanasi, Uttar Pradesh 221005, India

Multifunctional Nano Bio Electronics Lab, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Gyeonggi-do, Republic of Korea

Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

Department of Engineering “Enzo Ferrari” (DIEF), University of Modena and Reggio Emilia, Modena 41125, Italy

Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon 16678 Republic of Korea

Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India

School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States

Funding

Science and Engineering Research Board · Sungkyunkwan University · Indian Institute of Science · National Research Foundation of Korea · Indian Institute of Technology (BHU) Varanasi

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