journal article·2024-09-03

Unraveling the Degradation Mechanisms of Perovskite Solar Cells under Mechanical Tensile Loads

Runda Li, Zengyi Sun, Libing Yao, Jiwei Liu, Shaochen Zhang, Donger Jin, Zixuan Peng, Yuan Tian, Jingyi Sun, Pengju Shi, Kai Zhang, Sisi Wang, Jiazhe Xu, Mingsheng Xu, Deren Yang, Rui Wang, Jingjing Xue

ACS Nano· Volume 18· Issue 35
Publisher page

Abstract

The short longevity of perovskite solar cells (PSCs) is the major hurdle toward their commercialization. In recent years, mechanical stability has emerged as a pivotal aspect in enhancing the overall durability of PSCs, prompting a myriad of strategies devoted to this issue. However, the mechanical degradation mechanisms of PSCs remain largely unexplored, with corresponding studies mainly limited to perovskite single crystals, neglecting the complexity and nuances present in PSC devices based on polycrystalline perovskite thin films. Herein, we reveal the underlying mechanisms of the mechanical degradation of formamidinium-based PSCs, which are the most prevalent high-performance PSC candidates. Under uniaxial tensile loads, we found that the degradation is mainly attributed to the sequential increase in the density of micropores and halide defects within the perovskite films. This phenomenon is consistent across various perovskite compositions and environmental conditions. Our findings elucidate mechanistic insights for more targeted mitigation strategies aimed at addressing the mechanical degradation of PSC devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China

State Key Laboratory of Silicon and Advanced Semiconductor Materials, College of Integrated Circuits, Zhejiang University, Hangzhou 310027, China

Funding

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering · National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province

References (48)

Show source-provided references
1. 10.1038/nphoton.2014.13410.1038/nphoton.2014.134 ↗
2. 10.1021/acs.chemrev.0c0010710.1021/acs.chemrev.0c00107 ↗
3. 10.1126/science.abo275710.1126/science.abo2757 ↗
4. 10.1038/s41563-021-01097-x10.1038/s41563-021-01097-x ↗
5. 10.1002/adma.20160655610.1002/adma.201606556 ↗
6. 10.1002/adma.20220638710.1002/adma.202206387 ↗
7. 10.1002/adma.20230803910.1002/adma.202308039 ↗
8. 10.1002/adma.20210987910.1002/adma.202109879 ↗
9. 10.1016/j.joule.2019.04.00510.1016/j.joule.2019.04.005 ↗
10. 10.1038/s41560-022-01038-110.1038/s41560-022-01038-1 ↗
11. 10.1126/science.abn314810.1126/science.abn3148 ↗
12. 10.1126/science.adf334910.1126/science.adf3349 ↗
13. 10.1021/acs.chemrev.8b0033610.1021/acs.chemrev.8b00336 ↗
14. 10.1126/science.ado517210.1126/science.ado5172 ↗
15. 10.1126/science.abf560210.1126/science.abf5602 ↗
16. 10.1002/adma.20230881910.1002/adma.202308819 ↗
17. 10.1002/adma.20220530110.1002/adma.202205301 ↗
18. 10.1038/s41467-021-21292-310.1038/s41467-021-21292-3 ↗
19. 10.1016/j.joule.2021.04.01410.1016/j.joule.2021.04.014 ↗
20. 10.1021/acsenergylett.3c0116710.1021/acsenergylett.3c01167 ↗
21. 10.1002/adfm.20221366110.1002/adfm.202213661 ↗
22. 10.1016/j.scriptamat.2018.02.02210.1016/j.scriptamat.2018.02.022 ↗
23. 10.1016/j.scriptamat.2022.11506410.1016/j.scriptamat.2022.115064 ↗
24. 10.48550/arXiv.2307.0707110.48550/arXiv.2307.07071 ↗
25. 10.1126/science.aat358310.1126/science.aat3583 ↗
26. 10.1039/C5EE03255E10.1039/C5EE03255E ↗
27. 10.1038/s41560-019-0535-710.1038/s41560-019-0535-7 ↗
28. 10.1016/j.solmat.2017.09.00210.1016/j.solmat.2017.09.002 ↗
29. 10.1016/j.nanoen.2020.10475510.1016/j.nanoen.2020.104755 ↗
30. 10.1038/nenergy.2016.14910.1038/nenergy.2016.149 ↗
31. 10.1002/adma.20240353110.1002/adma.202403531 ↗
32. 10.1016/j.joule.2022.12.01310.1016/j.joule.2022.12.013 ↗
33. 10.1038/s41560-023-01378-610.1038/s41560-023-01378-6 ↗
34. 10.1002/adma.20210937410.1002/adma.202109374 ↗
35. 10.1021/acsami.2c0192510.1021/acsami.2c01925 ↗
36. 10.1016/j.actamat.2020.01.04010.1016/j.actamat.2020.01.040 ↗
37. 10.1002/adma.20140168510.1002/adma.201401685 ↗
38. 10.1038/s41560-021-00949-910.1038/s41560-021-00949-9 ↗
39. 10.1038/s41578-020-0221-110.1038/s41578-020-0221-1 ↗
40. 10.1021/acsenergylett.7b0028210.1021/acsenergylett.7b00282 ↗
41. 10.1038/s41467-020-20066-710.1038/s41467-020-20066-7 ↗
42. 10.1063/1.8969310.1063/1.89693 ↗
43. Huff H. R. · 1981
44. 10.1149/1.211599810.1149/1.2115998 ↗
45. Kugimiya K. · Semiconduct. Silicon · 1981 · 1981 · 294
46. 10.1063/1.8983110.1063/1.89831 ↗
47. 10.1038/s41586-019-1868-x10.1038/s41586-019-1868-x ↗
48. 10.1038/s41467-019-08507-410.1038/s41467-019-08507-4 ↗