DataVXACS NanoPaper
journal article·2024-02-07

Electrochemical Analysis of Ion Effects on Electrolyte-Gated Synaptic Transistor Characteristics

Haeyeon Lee, Jinil Cho, Minho Jin, Jae Hak Lee, Chan Lee, Jiyeon Kim, Jiho Lee, Jong Chan Shin, Jeeyoung Yoo, Eungkyu Lee, Youn Sang Kim

ACS Nano
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Source abstract

Abstract

Electrolyte-gated transistors (EGTs) are promising candidates as artificial synapses owing to their precise conductance controllability, quick response times, and especially their low operating voltages resulting from ion-assisted signal transmission. However, it is still vague how ion-related physiochemical elements and working mechanisms impact synaptic performance. Here, to address the unclear correlations, we suggest a methodical approach based on electrochemical analysis using poly(ethylene oxide) EGTs with three alkali ions: Li +, Na +, and K + . Cyclic voltammetry is employed to identify the kind of electrochemical reactions taking place at the channel/electrolyte interface, which determines the nonvolatile memory functionality of the EGTs. Additionally, using electrochemical impedance spectroscopy and qualitative analysis of electrolytes, we confirm that the intrinsic properties of electrolytes (such as crystallinity, solubility, and ion conductivity) and ion dynamics ultimately define the linearity/symmetricity of conductance modulation. Through simple but systematic electrochemical analysis, these results offer useful insights for the selection of components for high-performing artificial synapses.
Source: openalex_inverted_index · Quality: baseline

Research context

Energy storageElectronic materials

OpenAlex topics: Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea

Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea

Samsung Display Company, Ltd., 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea

Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea

School of Energy Engineering, Kyungpook National University, Daegu 41566, Republic of Korea

Department of Electronic Engineering, Kyung Hee University, Yongin-si, Gyeonggi-do 17104, Republic of Korea

Advanced Institutes of Convergence Technology, 145 Gwanggyo-ro, Yeongtong-gu, Suwon 16229, Republic of Korea

Funding

National Research Foundation of Korea · Korea Institute for Advancement of Technology

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