Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor
Abstract
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Advanced Thermoelectric Materials and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
Institute of Materials Research & Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singapore 138634
Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor Straße 6, 12489 Berlin, Germany
SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
Department of Chemistry, National University of Singapore, 2 Science Drive 3, Singapore 117542
Research Center for Applied Sciences, Academia Sinica, Taipei 10617, Taiwan
Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Centre for Advanced 2D Materials, National University of Singapore, Block S14, Level 6, 6 Science Drive 2, Singapore 117546
Funding
Ministry of Education - Singapore · Deutsche Forschungsgemeinschaft · Science and Engineering Research Council · Graphene Research Centre, National University Singapore