B-site acceptor doped AgNbO3 lead-free antiferroelectric ceramics: The role of dopant on microstructure and breakdown strength
Source abstract
Abstract
Abstract B-site aliovalent modification of AgNbO3 with a nominal composition of Ag(Nb1-xMx)O3-x/2 (x = 0.01, M = Ti, Zr and Hf) was prepared. The effects of dopants on microstructure, dielectric, ferroelectric and conduction properties were investigated. The results indicate that the introduction of acceptor dopant does not lead to grain coarsening. Zr4+ and Hf4+ doping are beneficial to stabilize the antiferroelectric phase of AgNbO3. Among all the samples, Ti4+ doped AgNbO3 has the minimum resistivity while Hf4+ doped AgNbO3 has the maximum resistivity, therefore, Hf4+ doped AgNbO3 has high BDS. The XPS results indicate that the conduction behaviour is associated with the concentration of oxygen vacancies. This work hints that acceptor dopant is also effective on the microstructure control and chemical modification of AgNbO3-based ceramics.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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