The partial pressure effect on the growth of YSZ film and YSZ buffered multilayers on silicon
Source abstract
Abstract
Abstract YSZ thin film was deposited on native Si wafer without prior removal of surface amorphous SiO x layer with pulsed laser deposition (PLD) technique by varying oxygen partial pressure during deposition. Initial oxygen partial pressure was about 10 −6 mbar followed by 5×10 −4 mbar. High quality YSZ thin film can be successfully fabricated without an amorphous interfacial SiO x layer. The YSZ thin film grows epitaxially on silicon with commensurately crystallized YSZ/Si interface. Superconducting YBCO and ferroelectric PZT thin films deposited on the high quality YSZ thin film show excellent physical and microstructure properties.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Acoustic Wave Resonator Technologies · Advanced ceramic materials synthesis · ZnO doping and properties
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References (9)
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