Spontaneous Phase Transition Charge of Liquid Metals Induced NH₃ Decomposition To Achieve GaN Nanomaterials at Room Temperature

Gallium nitride (GaN) is a wide-band gap semiconductor material with excellent optoelectronic performance and stability, which has been widely used in electronic devices. However, the previous promotion and expansion of GaN were limited by harsh manufacturing conditions and complex processes. The unique room-temperature liquid-state structure and adjustable surface atomic composition of liquid metals present an ideal platform for the energy-efficient production of functional materials. Herein, we propose a strategy for surface atomic low-energy manufacturing of liquid metals based on mechanical friction to achieve GaN films. The Ga and In particles were combined and then subjected to NH 3 atmosphere. The contact interface between Ga and In particles spontaneously undergoes a liquid-phase transition to form liquid metals. The friction charges were generated at the multilevel interfaces from the mixed-phase system, including Ga/In, Ga/eGaIn, and In/eGaIn. The microcurrent initiates the breaking of N–H bonds in NH 3 . These intermediates reassembled on the liquid metal surface, initiating the deposition and formation of a GaN nanomaterial film while releasing hydrogen (H 2 ). Furthermore, by combining the diversity and adjustability of atoms and gases, this finding provides a universal, effective, and green manufacturing strategy for functional films, and is expected to promote the development of mechanical manufacturing techniques.